221 nm far ultraviolet-C AlGaN laser diode with optimized p-AlN electron blocking epilayers

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2024-11-16 DOI:10.1007/s11082-024-07788-4

Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali, Jamshad Bashir, Zoya Noor

引用次数: 0

Abstract

The optical characteristics of far ultraviolet-C (FUV) laser diode (LD), with optimized position of AlN electron blocking layer (EBL), is shown to enhance carrier injection into the multiquantum well region. The carrier behavior mechanism of FUV LDs is illustrated through the simulation results. The optimization of AlN EBL position, in the p-region of the FUV LD, is studied in this work. FUV LD with p-AlN EBL, between last quantum barrier and p-waveguide, show an improved gain profile and stimulated emission. The optical power of this FUV LD has been found to have increased markedly. All our FUV LDs are emitting far ultraviolet-C emission i.e., 221 nm. To the best of our knowledge, 221 nm AlGaN LDs are hardly reported in the literature. Therefore, we believe our work on 221 nm AlGaN far ultraviolet-C laser diode will open new avenues for the research community.

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采用优化的 p-AlN 电子阻挡外延层的 221 纳米远紫外-C AlGaN 激光二极管

远紫外-C（FUV）激光二极管（LD）的光学特性表明，优化 AlN 电子阻挡层（EBL）的位置可增强多量子阱区的载流子注入。模拟结果说明了 FUV LD 的载流子行为机制。本研究还对 FUV LD p 区中 AlN EBL 位置的优化进行了研究。在最后一个量子势垒和 p 波导之间使用 p-AlN EBL 的 FUV LD 显示出更好的增益曲线和受激发射。这种 FUV LD 的光功率明显提高。我们所有的 FUV LD 都发射远紫外-C 辐射，即 221 nm。据我们所知，221 nm AlGaN LD 在文献中几乎没有报道。因此，我们相信我们在 221 nm AlGaN 远紫外-C 激光二极管方面的工作将为研究界开辟新的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.