All dielectric compact broadband silicon waveguide mode converters

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Samar Hassan A. Hassan, Mohamed Farhat O. Hameed, Korany R. Mahmoud, Amr Wageeh, S. S. A. Obayya
{"title":"All dielectric compact broadband silicon waveguide mode converters","authors":"Samar Hassan A. Hassan,&nbsp;Mohamed Farhat O. Hameed,&nbsp;Korany R. Mahmoud,&nbsp;Amr Wageeh,&nbsp;S. S. A. Obayya","doi":"10.1007/s11082-024-07747-z","DOIUrl":null,"url":null,"abstract":"<div><p>Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE<sub>0</sub> → TE<sub>1</sub> and TE<sub>0</sub>→TE<sub>2</sub> MOCs. The proposed designs depend on using dielectric material of Si<sub>3</sub>N<sub>4</sub> inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>:TE<sub>2</sub> MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are &gt; 86% and &lt;  − 14.3 dB, respectively. Further, the fabrication tolerance of the suggested structures is handled to guarantee the presented mode converter’s fabrication viability. The reported designs can also be extended to other wavelength bands. In this regard, our device’s numerical results at λ = 1.55 µm are reported and compared to other conventional MOCs. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 90% (− 19 dB), and 88% (− 19.7 dB) for TE<sub>0</sub>: TE<sub>1</sub> and TE<sub>0</sub>: TE<sub>2</sub> MOCs, respectively, at λ = 1.55 µm.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07747-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Compact mode order converters (MOCs) operating at the mid-infrared regime are reported using silicon-on-calcium fluoride platform. The suggested designs convert the fundamental transverse electric (TE) mode to first and second order TE modes with total device lengths of only 5.89 μm and 5 μm, respectively, at λ = 3.14 µm. The full vectorial 3D finite-deference time-domain is utilized to analyze the TE0 → TE1 and TE0→TE2 MOCs. The proposed designs depend on using dielectric material of Si3N4 inside the Si core region to improve and facilitate the mode conversion process. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 93.4% (− 19.2 dB), and 90% (− 17 dB) for TE0: TE1 and TE0:TE2 MOCs, respectively. Moreover, the reported designs have a wide wavelength range of 300 nm, where the conversion-efficiency (CE) and maximum CT are > 86% and <  − 14.3 dB, respectively. Further, the fabrication tolerance of the suggested structures is handled to guarantee the presented mode converter’s fabrication viability. The reported designs can also be extended to other wavelength bands. In this regard, our device’s numerical results at λ = 1.55 µm are reported and compared to other conventional MOCs. The conversion efficiencies (inter-modal crosstalks [CTs]) are equal to 90% (− 19 dB), and 88% (− 19.7 dB) for TE0: TE1 and TE0: TE2 MOCs, respectively, at λ = 1.55 µm.

全介质紧凑型宽带硅波导模式转换器
本研究利用硅基氟化钙平台报告了在中红外系统下工作的紧凑型模阶转换器(MOC)。建议的设计将基本横向电(TE)模式转换为一阶和二阶 TE 模式,在 λ = 3.14 µm 时,器件总长度分别仅为 5.89 μm 和 5 μm。全矢量三维有限差分时域用于分析 TE0 → TE1 和 TE0→TE2 MOC。建议的设计依赖于在硅核区域内使用 Si3N4 介电材料来改进和促进模式转换过程。TE0: TE1 和 TE0:TE2 MOC 的转换效率(模式间串扰 [CT])分别为 93.4% (- 19.2 dB) 和 90% (- 17 dB)。此外,报告的设计具有 300 nm 的宽波长范围,其转换效率 (CE) 和最大 CT 分别为 86% 和 - 14.3 dB。此外,还处理了建议结构的制造容差,以保证所提出的模式转换器的制造可行性。报告中的设计还可以扩展到其他波段。在这方面,报告了我们的器件在 λ = 1.55 µm 时的数值结果,并与其他传统 MOC 进行了比较。在 λ = 1.55 µm 时,TE0: TE1 和 TE0: TE2 MOC 的转换效率(模式间串扰 [CT])分别为 90% (- 19 dB) 和 88% (- 19.7 dB)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信