Nanostructured AlxIn1−xPySbzAs1−y–z semiconductor alloy as a competent material for optoelectronic and solar cell applications

Abstract

Al_xIn_1−xP_ySb_zAs_1−y–z alloy is a novel pentanary zinc-blende semiconductor compound. The composition and temperature-dependent electronic band structure, refractive index (n), high-frequency dielectric constant \((\varepsilon_{\infty } ),\) static dielectric constant \((\varepsilon_{o} )\) of nanostructured Al_xIn_1−xP_ySb_zAs_1−y–z lattice matched to InP substrate has been explored. Also, the relationship between the acoustic speed and phonon frequencies (ω_LO and ω_TO) of Al_xIn_1-xP_ySb_zAs_1−y–z for InP substrate with composition and temperature has been studied. Our calculations implemented a pseudopotential approach (EPM) with a virtual crystal approximation (VCA). The refractive index (n) and optical dielectric constant \((\varepsilon_{\infty } )\) are decreased by increasing y from 0 to 0.5 and then increasing from y = 0.5 to 1. The static dielectric constant \((\varepsilon_{o} )\) is reduced by growing y from 0 to 0.4 and after that improved from y = 0.4 to 1. The ω_LO at (z = 0, T = 200 K) is increased by increasing the P content from 0 to about 0.28, and after that, it decreases by increasing y from 0.28 to 1. The ω_TO at (z = 0, T = 200 K) is increased when the phosphorus content is increased from 0 to 0.23 and decreases when the y value is increased from about 0.23 to 1. The n, and \(\varepsilon_{\infty }\) are enhanced by enhancing the temperature from 0 to 500 K, while the static dielectric constant is decreased by enhancing temperature. Our results and the available experimental and published data showed good agreement when compared. The flexibility of Al_xIn_1−xP_ySb_zAs_1−y–z originates from its ability to customize its electronic and optical properties by varying the composition. This makes it a potential material for many applications in optoelectronics such as solar cells, and high-speed electronics.