DFT calculations of pressure effects on structural stability, optoelectronic and thermoelectric properties of SrZrO3

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Muhammad Rizwan, Hafiz Muhammad Naeem Ullah, Syed Shahbaz Ali, Uzma Hira, Hamza Naeem, Zahid Usman
{"title":"DFT calculations of pressure effects on structural stability, optoelectronic and thermoelectric properties of SrZrO3","authors":"Muhammad Rizwan,&nbsp;Hafiz Muhammad Naeem Ullah,&nbsp;Syed Shahbaz Ali,&nbsp;Uzma Hira,&nbsp;Hamza Naeem,&nbsp;Zahid Usman","doi":"10.1007/s11082-024-06495-4","DOIUrl":null,"url":null,"abstract":"<div><p>The mechanical stability, band gap enhancement, optical response and impact of pressure on thermoelectric figure of merit are considered vital parameters from thermoelectric device’s perspective based on SrZrO<sub>3</sub> (SZO). The knowledge of elastic constant expressed structural stability of SZO (cubic symmetry) even at elevated pressures. Cauchy’s pressure and Poisson’s ratios demonstrated brittle behavior of SZO till 10 GPa, and it transformed to ductile material for higher pressures. The topology of electronic band structure and its pressure effects are discussed with the help of density of states. Optical properties expressed significant shifting to higher energy values as a function of pressure. Seebeck coefficient and electrical conductivity showed an increasing trend with the application of external pressure, with no significant change in their graphical behavior from its ambient conditions. The lowest value of ZT is obtained at 40 GPa. The structural stability and sustained thermoelectric behavior at higher pressure declares SZO as ideal candidate for energy applications at extreme conditions.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-06495-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The mechanical stability, band gap enhancement, optical response and impact of pressure on thermoelectric figure of merit are considered vital parameters from thermoelectric device’s perspective based on SrZrO3 (SZO). The knowledge of elastic constant expressed structural stability of SZO (cubic symmetry) even at elevated pressures. Cauchy’s pressure and Poisson’s ratios demonstrated brittle behavior of SZO till 10 GPa, and it transformed to ductile material for higher pressures. The topology of electronic band structure and its pressure effects are discussed with the help of density of states. Optical properties expressed significant shifting to higher energy values as a function of pressure. Seebeck coefficient and electrical conductivity showed an increasing trend with the application of external pressure, with no significant change in their graphical behavior from its ambient conditions. The lowest value of ZT is obtained at 40 GPa. The structural stability and sustained thermoelectric behavior at higher pressure declares SZO as ideal candidate for energy applications at extreme conditions.

DFT 计算压力对 SrZrO3 结构稳定性、光电和热电特性的影响
从基于 SrZrO3(SZO)的热电设备的角度来看,机械稳定性、带隙增强、光学响应和压力对热电特性的影响被认为是至关重要的参数。对弹性常数的了解表明,即使在高压下,SZO(立方对称)的结构也是稳定的。考奇压力和泊松比表明,SZO 在 10 GPa 以下为脆性材料,在更高压力下则转变为韧性材料。在状态密度的帮助下讨论了电子带结构拓扑及其压力效应。随着压力的变化,光学特性明显向高能量值转移。塞贝克系数和电导率随着外部压力的施加呈上升趋势,与环境条件相比,它们的图形行为没有明显变化。ZT 的最低值出现在 40 GPa 时。SZO 在较高压力下的结构稳定性和持续热电行为表明,它是极端条件下能源应用的理想候选材料。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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