{"title":"High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors","authors":"Bingkai Liu;Yudong Li;Lin Wen;Jie Feng;Yulong Cai;Qi Guo","doi":"10.1109/TNS.2024.3466180","DOIUrl":null,"url":null,"abstract":"We recently evaluate the high total ionizing dose (TID) effects on 0.18-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm backside-illuminated CMOS image sensors (BSI CISs) with different epitaxial layer thicknesses and backside oxide passivation techniques. \n<inline-formula> <tex-math>$\\gamma $ </tex-math></inline-formula>\n-irradiated device exhibits a huge dark current increase and quantum efficiency (QE) degradation. Moreover, a significant dark current nonuniformity on the whole array is observed at high TID. Results show that the BSI CIS does not capture images and all the functionality is lost after 4 Mrad(SiO2). It is observed that BSI CIS using Al2O3 film as the passivation technique is proven to be more efficient in mitigating high TID effects compared to the imagers using boron implant, suggesting that passivation technique options play a crucial role in determining the performance of BSI CIS at high TID level.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"71 11","pages":"2393-2399"},"PeriodicalIF":1.9000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10689447/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We recently evaluate the high total ionizing dose (TID) effects on 0.18-
$\mu $
m backside-illuminated CMOS image sensors (BSI CISs) with different epitaxial layer thicknesses and backside oxide passivation techniques.
$\gamma $
-irradiated device exhibits a huge dark current increase and quantum efficiency (QE) degradation. Moreover, a significant dark current nonuniformity on the whole array is observed at high TID. Results show that the BSI CIS does not capture images and all the functionality is lost after 4 Mrad(SiO2). It is observed that BSI CIS using Al2O3 film as the passivation technique is proven to be more efficient in mitigating high TID effects compared to the imagers using boron implant, suggesting that passivation technique options play a crucial role in determining the performance of BSI CIS at high TID level.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.