Magnetization response and magnetoelectric coupling of Mn-doped BiFeO3 thin films–microwave-assisted sol–gel approach

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Waqar Azeem, Robina Ashraf, K. M. Batoo, Naveed Ahmad, Zohra N. Kayani, Shahid Atiq, Y. B. Xu, Shahzad Naseem, Saira Riaz
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引用次数: 0

Abstract

Bismuth iron oxide is a promising material that can exhibit ferroelectric and ferromagnetic phenomena simultaneously at room temperature. However, some problems related to bismuth iron oxide include volatile nature of bismuth oxide and large value of leakage current. Present study is an attempt to address these problems by doping manganese (Mn) in BiFeO3 with varying Mn concentration from 1 to 5wt%. The sols of undoped and doped BiFeO3 are processed by microwave-assisted sol–gel method at a power of 720 W. These sols are spin deposited on copper substrates and annealing was performed at temperature of 350 °C. XRD analysis shows the incorporation of doping ions without altering the rhombohedral structure. Crystallite size is found to be less than cycloidal spin structure. Ferromagnetic nature with high value of saturation magnetization was observed in doped samples. The microwave synthesized thin films show normal and anomalous behavior, i.e. U-shaped dielectric response. The dominant role of grain boundaries is observed from Cole–Cole plots. ME coupling is observed for the samples that makes this material an interesting system to be considered in magneto electric applications.

Abstract Image

掺锰 BiFeO3 薄膜的磁化响应和磁电耦合--微波辅助溶胶-凝胶法
氧化铁铋是一种很有前途的材料,可在室温下同时显示铁电现象和铁磁现象。然而,与氧化铋铁有关的一些问题包括氧化铋的挥发性和较大的漏电流值。本研究试图通过在 BiFeO3 中掺入锰(Mn)来解决这些问题,锰的浓度在 1 到 5wt% 之间。未掺杂和掺杂的 BiFeO3 溶胶是通过微波辅助溶胶-凝胶法在 720 W 的功率下处理的。XRD 分析表明,掺杂离子的加入不会改变斜方体结构。晶体尺寸小于环状自旋结构。掺杂样品具有铁磁性,饱和磁化值很高。微波合成的薄膜显示出正常和异常行为,即 U 型介电响应。从科尔-科尔图中可以观察到晶界的主导作用。在样品中观察到的 ME 耦合使这种材料成为磁电应用中值得考虑的系统。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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