Computer Simulation of X-ray Section Topography of Gas Pores in a Silicon Carbide Crystal

Abstract

The results of computer simulation of images of gas pores in a silicon carbide crystal in section topograms, i.e., during diffraction of a narrow X-ray beam in the crystal, are reported for the first time. The simulation was performed using a special module of the universal computer program XRWP. This program is being developed by the author to calculate the effects of coherent X-ray optics. The calculation method combines two previously known methods, specifically, the Fourier transform method (Kato method) and the method of solving the Takagi–Taupin equations. It is shown that gas pores can produce a wide variety of images, depending on the experimental conditions and the pore position inside the crystal.