{"title":"Thermoelectric Power Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals","authors":"Khairiah Alshehri","doi":"10.1134/S1063783424601231","DOIUrl":null,"url":null,"abstract":"<p>A modified Bridgman technique was used to crystallize the Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> compound. The rate of change in the thermoelectric power (TEP) as a function of temperature of the Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> compound is measured within the temperature range (218–402 K). Measurements revealed that the conductivity of the crystals was n-type. Investigations were conducted into the connection between TEP, charge carrier concentration, and electrical conductivity. The experimental results were used to calculate a number of physical properties, including as mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation periods. The overall behavior of the semiconductor is shown by these features. According to our findings, asgrown Tl<sub>4</sub>In<sub>3</sub>GaS<sub>8</sub> crystals are typically <i>n</i>-type and have the potential to be employed as thermoelectric power generating possibilities.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 11","pages":"516 - 520"},"PeriodicalIF":0.9000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783424601231","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
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Abstract
A modified Bridgman technique was used to crystallize the Tl4In3GaS8 compound. The rate of change in the thermoelectric power (TEP) as a function of temperature of the Tl4In3GaS8 compound is measured within the temperature range (218–402 K). Measurements revealed that the conductivity of the crystals was n-type. Investigations were conducted into the connection between TEP, charge carrier concentration, and electrical conductivity. The experimental results were used to calculate a number of physical properties, including as mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation periods. The overall behavior of the semiconductor is shown by these features. According to our findings, asgrown Tl4In3GaS8 crystals are typically n-type and have the potential to be employed as thermoelectric power generating possibilities.
期刊介绍：
Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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