Effect of transition metal decoration on field emission properties of vertically aligned carbon nanotubes: an interplay between conventional parameters and occupancy of 3d and 4 s states

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-14 DOI:10.1007/s10854-024-13826-4

Gulshan Kumar, Santanu Ghosh, Arushi Arora, Menaka Jha, Pankaj Srivastava

引用次数: 0

Abstract

The present work analyses the effect of transition metal decoration on field emission properties of vertically aligned carbon nanotubes (VACNTs). Several transition metals (Co, Ni, Cu, and Zn) have been decorated on VACNTs to examine the role of d-state occupancy on the field emission properties. It is found that d-state occupancy does play a role in governing the current density, and it is not always possible to explain the field emission results only on the basis of conventional parameters like field enhancement factor and work function. The present study shows that among the studied transition metals and their oxides, Zn and CuO-decorated VACNTs give the most promising field emission results.

查看原文本刊更多论文

过渡金属装饰对垂直排列碳纳米管场发射特性的影响：常规参数与 3d 和 4 s 状态占据之间的相互作用

本研究分析了过渡金属装饰对垂直排列碳纳米管（VACNTs）场发射特性的影响。在 VACNT 上装饰了几种过渡金属（Co、Ni、Cu 和 Zn），以研究 d 态占据对场发射特性的作用。研究发现，d-态占位在控制电流密度方面确实起着一定的作用，而且并不总是能够仅根据场增强因子和功函数等传统参数来解释场发射结果。本研究表明，在所研究的过渡金属及其氧化物中，Zn 和 CuO 装饰的 VACNT 具有最理想的场发射结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.