Synthesis of PMMA/PEG/SiO2/SiC Multifunctional Nanostructures and Exploring the Microstructure and Dielectric Features for Flexible Nanodielectric Applications

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2024-09-21 DOI:10.1007/s12633-024-03138-x
Zina Sattar, Ahmed Hashim
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引用次数: 0

Abstract

This study intends to improve the dielectric properties of PMMA/PEG/SiO2/SiC nanostructures for use in flexible pressure sensors and electrical nanodevices. PMMA/PEG films and PMMA/PEG films doped with SiO2 and SiC NPs were created using a casting technique. The structural properties of PMMA/PEG/SiO2/SiC nanostructures were examined using FTIR and an optical microscope. The dielectric properties were assessed using an LCR meter across a frequency range from 100 Hz to 5 MHz. The analysis of the structural features of PMMA/PEG/SiO2/SiC nanostructures showed a significant presence of SiO2 and SiC nanoparticles in the PMMA/PEG material and strong integration between SiO2 and SiC nanoparticles and the PMMA/PEG matrix. The dielectric properties showed an increase in the dielectric parameters of PMMA/PEG as the concentration of SiO2-SiC NPs increased. The dielectric constant and AC electrical conductivity of PMMA/PEG rose by approximately 39% and 49%, respectively, with low dielectric loss values ranging from 0.14 to 0.275 at 100 Hz. These findings suggest that PMMA/PEG/SiO2/SiC nanostructures may be suitable for a variety of nanoelectronics applications. The dielectric properties of PMMA/PEG/SiO2/SiC nanostructures changed as the frequency increased. The structure and dielectric properties of the PMMA/PEG/SiO2/SiC nanostructures suggest they can be used in a variety of flexible nanoelectronics applications due to their low-cost, high-energy storage capability, and minimal energy loss. An investigation was conducted on the pressure sensor application of PMMA/PEG/SiO2/SiC nanostructures. The results indicated that the PMMA/PEG/SiO2/SiC nanostructures exhibit high sensitivity to pressure, exceptional flexibility, and strong environmental resilience in comparison to other sensors.

合成 PMMA/PEG/SiO2/SiC 多功能纳米结构并探索用于柔性纳米介电应用的微观结构和介电特性
本研究旨在改善 PMMA/PEG/SiO2/SiC 纳米结构的介电性能,以用于柔性压力传感器和纳米电子器件。采用浇铸技术制作了 PMMA/PEG 薄膜和掺杂了 SiO2 和 SiC NPs 的 PMMA/PEG 薄膜。使用傅立叶变换红外光谱仪和光学显微镜检测了 PMMA/PEG/SiO2/SiC 纳米结构的结构特性。使用 LCR 计对介电特性进行了评估,频率范围为 100 Hz 至 5 MHz。对 PMMA/PEG/SiO2/SiC 纳米结构特征的分析表明,PMMA/PEG 材料中含有大量 SiO2 和 SiC 纳米颗粒,SiO2 和 SiC 纳米颗粒与 PMMA/PEG 基体之间的结合非常紧密。介电性能表明,随着 SiO2-SiC 纳米粒子浓度的增加,PMMA/PEG 的介电参数也随之增加。PMMA/PEG 的介电常数和交流电导率分别提高了约 39% 和 49%,介电损耗低,在 100 Hz 时介电损耗值为 0.14 至 0.275。这些发现表明,PMMA/PEG/SiO2/SiC 纳米结构可能适用于各种纳米电子应用。PMMA/PEG/SiO2/SiC 纳米结构的介电性能随着频率的增加而变化。PMMA/PEG/SiO2/SiC纳米结构的结构和介电性质表明,由于其低成本、高储能能力和最小能量损失,它们可用于各种柔性纳米电子应用。研究人员对 PMMA/PEG/SiO2/SiC 纳米结构的压力传感器应用进行了调查。结果表明,与其他传感器相比,PMMA/PEG/SiO2/SiC 纳米结构对压力具有高灵敏度、优异的柔韧性和较强的环境适应能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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