Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jaswanth Arcot, Kaleemulla Shaik
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引用次数: 0

Abstract

Tin doped cadmium oxide (Cd1-xSnxO) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm−1 to 1000 cm−1. Using Tauc’s relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd1-xSnxO thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature.

用于发光二极管的透明导电 Cd1-xSnxO 薄膜的铁磁和光致发光特性
利用电子束蒸发技术制备了不同锡(Sn)浓度(x = 0、0.03、0.05、0.07)的锡掺杂氧化镉(Cd1-xSnxO)薄膜,并对其进行了各种表征。从 XRD 可以看出,制备的薄膜呈多晶立方结构。FE-SEM 纳米图证实了长宽比为 1:3 的拉长椭圆形形态。傅立叶变换红外光谱分析显示了官能团的存在和化学作用。拉曼光谱的记录范围为 200 cm-1 至 1000 cm-1。利用陶氏关系计算出光带隙,发现它增加了 2.00 eV - 2.40 eV。记录了 Cd1-xSnxO 薄膜的光致发光光谱,并在可见光区域发现了发射峰。CIE 图确认了薄膜的蓝绿部分。使用源表检测了电学特性,发现电阻率有所下降。磁性能表明,掺锡氧化镉薄膜具有铁磁性。
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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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