Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe2.

IF 2.6 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Beilstein Journal of Nanotechnology Pub Date : 2024-11-06 eCollection Date: 2024-01-01 DOI:10.3762/bjnano.15.109
Guixian Liu, Yufan Wang, Zhoujuan Xu, Zhouxiaosong Zeng, Lanyu Huang, Cuihuan Ge, Xiao Wang
{"title":"Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe<sub>2</sub>.","authors":"Guixian Liu, Yufan Wang, Zhoujuan Xu, Zhouxiaosong Zeng, Lanyu Huang, Cuihuan Ge, Xiao Wang","doi":"10.3762/bjnano.15.109","DOIUrl":null,"url":null,"abstract":"<p><p>Constructing van der Waals materials with spontaneous out-of-plane polarization through interlayer engineering expands the family of two-dimensional ferroelectrics and provides an excellent platform for enhancing the photoelectric conversion efficiency. Here, we reveal the effect of spontaneous polarization on ultrafast carrier dynamics in rhombohedral stacked bilayer WSe<sub>2</sub>. Using precise stacking techniques, a 3R WSe<sub>2</sub>-based vertical heterojunction was successfully constructed and confirmed by polarization-resolved second harmonic generation measurements. Through output characteristics and the scanning photocurrent map under zero bias, we reveal a non-zero short-circuit current in the graphene/3R WSe<sub>2</sub>/graphene heterojunction region, demonstrating the bulk photovoltaic effect. Furthermore, the out-of-plane polarization enables the 3R WSe<sub>2</sub> heterojunction region to achieve an ultrafast intrinsic photoresponse time of approximately 3 ps. The ultrafast response time remains consistent across varying detection powers, demonstrating environmental stability and highlighting the potential in optoelectronic applications. Our study presents an effective strategy for enhancing the response time of photodetectors.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":"15 ","pages":"1362-1368"},"PeriodicalIF":2.6000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11552432/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3762/bjnano.15.109","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/1/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Constructing van der Waals materials with spontaneous out-of-plane polarization through interlayer engineering expands the family of two-dimensional ferroelectrics and provides an excellent platform for enhancing the photoelectric conversion efficiency. Here, we reveal the effect of spontaneous polarization on ultrafast carrier dynamics in rhombohedral stacked bilayer WSe2. Using precise stacking techniques, a 3R WSe2-based vertical heterojunction was successfully constructed and confirmed by polarization-resolved second harmonic generation measurements. Through output characteristics and the scanning photocurrent map under zero bias, we reveal a non-zero short-circuit current in the graphene/3R WSe2/graphene heterojunction region, demonstrating the bulk photovoltaic effect. Furthermore, the out-of-plane polarization enables the 3R WSe2 heterojunction region to achieve an ultrafast intrinsic photoresponse time of approximately 3 ps. The ultrafast response time remains consistent across varying detection powers, demonstrating environmental stability and highlighting the potential in optoelectronic applications. Our study presents an effective strategy for enhancing the response time of photodetectors.

平面外偏振在斜方体叠层双层 WSe2 中诱导皮秒光响应。
通过层间工程构建具有面外自发极化的范德华材料,拓展了二维铁电家族,并为提高光电转换效率提供了一个绝佳的平台。在这里,我们揭示了自发极化对斜方体堆叠双层 WSe2 中超快载流子动力学的影响。利用精确的堆叠技术,我们成功地构建了基于 3R WSe2 的垂直异质结,并通过偏振分辨二次谐波发生测量得到了证实。通过零偏压下的输出特性和扫描光电流图,我们揭示了石墨烯/3R WSe2/石墨烯异质结区域的非零短路电流,证明了体光伏效应。此外,面外极化使 3R WSe2 异质结区域实现了约 3 ps 的超快本征光响应时间。这种超快响应时间在不同的探测功率下保持一致,显示了环境稳定性,并突出了其在光电应用方面的潜力。我们的研究提出了一种提高光电探测器响应时间的有效策略。
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来源期刊
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.70
自引率
3.20%
发文量
109
审稿时长
2 months
期刊介绍: The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology. The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.
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