Gyeongpyo Kim, Doheon Yoo, Hyojin So, Seoyoung Park, Sungjoon Kim, Min-Jae Choi, Sungjun Kim
{"title":"Precise weight tuning in quantum dot-based resistive-switching memory for neuromorphic systems.","authors":"Gyeongpyo Kim, Doheon Yoo, Hyojin So, Seoyoung Park, Sungjoon Kim, Min-Jae Choi, Sungjun Kim","doi":"10.1039/d4mh01182a","DOIUrl":null,"url":null,"abstract":"<p><p>In this study, nonvolatile bipolar resistive switching and synaptic emulation behaviors are performed in an InGaP quantum dots (QDs)/HfO<sub>2</sub>-based memristor device. First, the physical and chemical properties of InGaP QDs are investigated by high-resolution transmission electron microscopy and spectrophotometric analysis. Through comparative experiments, it is proven that the HfO<sub>2</sub> layer improves the variations in resistive switching characteristics. Additionally, the Al/QDs/HfO<sub>2</sub>/ITO device exhibits reversible switching performances with excellent data retention. Fast switching speeds in the order of nanoseconds were confirmed, which could be explained by trapping/detrapping and quantum tunneling effects by the trap provided by nanoscale InGaP QDs. In addition, the operating voltage is decreased when the device is exposed to ultraviolet light for low-power switching. Biological synapse features such as spike-timing-dependent plasticity are emulated for neuromorphic systems. Finally, the incremental step pulse using proven algorithm method enabled the implementation of four-bit states (16 states), markedly enhancing the inference precision of neuromorphic systems.</p>","PeriodicalId":87,"journal":{"name":"Materials Horizons","volume":" ","pages":""},"PeriodicalIF":12.2000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Horizons","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4mh01182a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, nonvolatile bipolar resistive switching and synaptic emulation behaviors are performed in an InGaP quantum dots (QDs)/HfO2-based memristor device. First, the physical and chemical properties of InGaP QDs are investigated by high-resolution transmission electron microscopy and spectrophotometric analysis. Through comparative experiments, it is proven that the HfO2 layer improves the variations in resistive switching characteristics. Additionally, the Al/QDs/HfO2/ITO device exhibits reversible switching performances with excellent data retention. Fast switching speeds in the order of nanoseconds were confirmed, which could be explained by trapping/detrapping and quantum tunneling effects by the trap provided by nanoscale InGaP QDs. In addition, the operating voltage is decreased when the device is exposed to ultraviolet light for low-power switching. Biological synapse features such as spike-timing-dependent plasticity are emulated for neuromorphic systems. Finally, the incremental step pulse using proven algorithm method enabled the implementation of four-bit states (16 states), markedly enhancing the inference precision of neuromorphic systems.