Defects make better semiconductors

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-11-14 DOI:10.1038/s41928-024-01299-6

Matthew Parker

引用次数: 0

Abstract

The researchers — who are based at the University of Illinois Urbana-Champaign — show that in certain compound semiconductors the defects self-organize into electrically neutral complexes. These push deep-level traps closer to the conduction band edge, where they act as donors. So rather than degrade performance, the CuIn₅Se₈ field-effect transistors with introduced defects show better performance than their less defective parent material, CuInSe₂.

The transistors show an average mobility of 58 cm² V^–1 s^–1, on-state current density of 35 μA μm^–1 and subthreshold swing of 189 mV dec^–1. They were used to make complementary logic circuits and ring oscillators (with solution-processed carbon nanotubes used to make the p-type transistors), and a driving circuit in a 508 pixels per inch micro-light-emitting diode.

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缺陷造就更好的半导体

伊利诺伊大学香槟分校的研究人员发现，在某些化合物半导体中，缺陷会自组织成电中性复合物。这些复合物将深层陷阱推近导带边缘，并在那里充当供体。因此，引入缺陷的 CuIn5Se8 场效应晶体管不仅没有降低性能，反而比缺陷较少的母体材料 CuInSe2 显示出更好的性能。晶体管的平均迁移率为 58 cm2 V-1 s-1，导通电流密度为 35 μA μm-1，阈下摆幅为 189 mV dec-1。它们被用于制造互补逻辑电路和环形振荡器（p 型晶体管用溶液加工的碳纳米管制造），以及 508 像素/英寸微型发光二极管的驱动电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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