Spectroscopic Evidence of Ultrafast Topological Phase Transition by Light-Driven Strain

IF 15.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Tae Gwan Park, Seungil Baek, Junho Park, Eui-Cheol Shin, Hong Ryeol Na, Eon-Taek Oh, Seung-Hyun Chun, Yong-Hyun Kim*, Sunghun Lee* and Fabian Rotermund*, 
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Abstract

Enabling reversible control over the topological invariants, transitioning them from nontrivial to trivial states, has fundamental implications for quantum information processing and spintronics. It offers a promising avenue for establishing an efficient on/off switch mechanism for robust and dissipationless spin-currents. While mechanical strain has traditionally been advantageous for such manipulation of topological invariants, it often comes with the drawback of in-plane fractures, rendering it unsuitable for high-speed, time-dependent operations. This study employs ultrafast optical and THz spectroscopy to explore topological phase transitions induced by light-driven strain in Bi2Se3. Bi2Se3 requires substantial strain for Z2 switching. Our observations provide experimental evidence of ultrafast switching behavior, demonstrating a transition from a topological insulator with spin-momentum-locked surfaces to hybridized states and normal insulating phases under ambient conditions. Notably, applying light-induced strong out-of-plane strain effectively suppresses surface-bulk coupling, facilitating the differentiation of surface and bulk conductance even at room temperature─significantly surpassing the Debye temperature. We expect various time-dependent sequences of transient hybridization and manipulation of topological invariant through photoexcitation intensity adjustments. The sudden surface and bulk transport alterations near the transition point enable coherent conductance modulation at hypersound frequencies. Our findings on the potential of light-triggered ultrafast switching of topological invariants hold promise for high-speed topological switching and its related applications.

Abstract Image

光驱动应变实现超快拓扑相变的光谱学证据
实现对拓扑不变性的可逆控制,使其从非琐碎状态过渡到琐碎状态,对量子信息处理和自旋电子学具有根本性的意义。它为建立一种高效的开关机制,实现稳健、无耗散的自旋电流提供了一条大有可为的途径。虽然机械应变在拓扑不变性的操作中具有传统优势,但它往往存在平面内断裂的缺点,因此不适合高速、随时间变化的操作。本研究采用超快光学和太赫兹光谱技术,探索光驱动应变在 Bi2Se3 中诱导的拓扑相变。Bi2Se3 需要大量应变才能实现 Z2 开关。我们的观察结果提供了超快转换行为的实验证据,证明了在环境条件下,从具有自旋动量锁定表面的拓扑绝缘体向杂化态和正常绝缘相的转变。值得注意的是,施加光诱导的强平面外应变可有效抑制表面-体耦合,从而促进表面和体导的分化,即使在室温下也是如此--大大超过了德拜温度。我们预计会出现各种随时间变化的瞬时杂化序列,并通过调整光激发强度来操纵拓扑不变性。过渡点附近突然发生的表面和块体输运变化可实现高频率的相干电导调制。我们关于光触发拓扑不变性超快切换潜力的研究结果为高速拓扑切换及其相关应用带来了希望。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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