Next-Generation Self-Powered Photodetectors using 2D Bismuth Oxide Selenide Crystals

Abstract

The concept of self-powered photodetectors has attracted significant attention due to their versatile applications in areas such as intelligent systems and hazardous substance detection. Among these, p–n junction and Schottky junction photodetectors are the most widely studied types; however, their fabrication processes are often complex and costly. To overcome these challenges, we focused on the emerging self-powered, ultrasensitive photodetector platform based on photoelectrochemical (PEC) principles. This platform leverages the unique properties of the emerging material bismuth oxide selenide (Bi₂O₂Se), which features a wide bandgap (∼2 eV) and a high absorption coefficient. We utilized chemical exfoliation to obtain thin layers of Bi₂O₂Se, enabling highly efficient photodetection. The device characterization demonstrated impressive performance metrics, including a responsivity of 97.1 μA W^–1 and a specific detectivity of 2 × 10⁸ cm Hz ^1/2 W^–1. The PEC photodetector also exhibits broad-spectrum sensitivity, from blue to infrared wavelengths, and features an ultrafast response time of ∼82 ms and a recovery time of ∼86 ms, highlighting its practical potential. Moreover, these self-powered photodetectors show excellent stability in electrochemical environments, positioning them promising candidates for integration into future high-efficiency devices.