Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-13 DOI:10.1063/5.0227254

Xiaodong Qiu, Zhixiong Xiao, Fan Yu, Yuling Yin, Lin Huang, Bin Yang, Qichao Tian, Kaili Wang, Yuyang Mu, Qinghao Meng, Xiangang Wan, Junming Liu, Di Wu, Yi Zhang

{"title":"Molecular beam epitaxy and band structures of type-II antiferromagnetic semiconductor EuTe thin films","authors":"Xiaodong Qiu, Zhixiong Xiao, Fan Yu, Yuling Yin, Lin Huang, Bin Yang, Qichao Tian, Kaili Wang, Yuyang Mu, Qinghao Meng, Xiangang Wan, Junming Liu, Di Wu, Yi Zhang","doi":"10.1063/5.0227254","DOIUrl":null,"url":null,"abstract":"The rare-earth Eu-based compounds with a unique half-filled 4f orbital have attracted an amount of research interest recently. Here, we synthesized EuTe(001) single-crystal thin films on SrTiO3(001) substrate via molecular beam epitaxy (MBE). The scanning tunneling microscopy and x-ray diffraction results indicate that the grown EuTe thin films orientated as EuTe[100]//SrTiO3[110] in plane. In the angle-resolved photoemission spectroscopic (ARPES) measurements, the grown EuTe films show a semiconductive band structure with the valence band maximum lying on the center point of the Brillouin zone. The bandgap size of EuTe was further identified by the optical transmission spectra as 2.2 eV. The antiferromagnetic transition temperature of the grown EuTe film is 10.5 K measured by a superconductive quantum interference device (SQUID). Our results provide important information on the fundamental electronic structures for the further research and applications of the Eu-based compounds.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"45 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0227254","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

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Abstract

The rare-earth Eu-based compounds with a unique half-filled 4f orbital have attracted an amount of research interest recently. Here, we synthesized EuTe(001) single-crystal thin films on SrTiO3(001) substrate via molecular beam epitaxy (MBE). The scanning tunneling microscopy and x-ray diffraction results indicate that the grown EuTe thin films orientated as EuTe[100]//SrTiO3[110] in plane. In the angle-resolved photoemission spectroscopic (ARPES) measurements, the grown EuTe films show a semiconductive band structure with the valence band maximum lying on the center point of the Brillouin zone. The bandgap size of EuTe was further identified by the optical transmission spectra as 2.2 eV. The antiferromagnetic transition temperature of the grown EuTe film is 10.5 K measured by a superconductive quantum interference device (SQUID). Our results provide important information on the fundamental electronic structures for the further research and applications of the Eu-based compounds.

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II 型反铁磁性半导体 EuTe 薄膜的分子束外延和能带结构

具有独特的半填充 4f 轨道的稀土 Eu 基化合物最近引起了大量研究兴趣。在此，我们通过分子束外延（MBE）技术在 SrTiO3（001）基底上合成了 EuTe（001）单晶薄膜。扫描隧道显微镜和 X 射线衍射结果表明，生长的 EuTe 薄膜在平面上取向为 EuTe[100]//SrTiO3[110]。在角度分辨光发射光谱（ARPES）测量中，生长出的 EuTe 薄膜呈现出价带最大值位于布里渊区中心点的半导体带结构。光透射光谱进一步确定了 EuTe 的带隙大小为 2.2 eV。通过超导量子干涉装置（SQUID）测量，生长的 EuTe 薄膜的反铁磁转变温度为 10.5 K。我们的研究结果为进一步研究和应用 Eu 基化合物提供了重要的基本电子结构信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.