Enhancement of positive bevel β-Ga2O3 trench MOS barrier Schottky diode by post-etching treatment

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2024-11-13 DOI:10.1016/j.apsusc.2024.161569

Fang Zhang, Xue Feng Zheng, Ye Hong Li, Zi Jian Yuan, Shao Zhong Yue, Xi Chen Wang, Yun Long He, Xiao Li Lu, Xiao Hua Ma, Yue Hao

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Abstract

A β-Ga₂O₃ trench MOS barrier Schottky (TMBS) diode with a novel terminal structure of positive bevel mesa and arc bottom corners has been designed and realized in this work. O₂ plasma, hydrogen fluoride (HF), and tetramethylammonium hydroxide (TMAH) are used for post-etching treatment of devices, respectively. Measurement results shows that the specific on-resistance of the three devices are nearly with the same value of 2.60 mΩ·cm². The breakdown voltage of the devices with O₂ plasma, HF, and TMAH treatments are 1280 V, 1440 V, and 1800 V, respectively. Moreover, it is worth nothing that devices treated with O₂ plasma have a lower reverse leakage. In addition, the breakdown location of the device is determined to be at the β-Ga₂O₃ interface under the edge of the field plate by combining simulation and capacitance breakdown testing. AFM and XPS are used to analyze the surface properties of β-Ga₂O₃ after post-etching treatments. The results show that the TMAH treatments have the most significant effect on reducing surface roughness, and the O₂ plasma treatments is the most effective in decreasing oxygen vacancies.

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通过蚀刻后处理提高正斜面 β-Ga2O3 沟槽 MOS 势垒肖特基二极管的性能

本研究设计并实现了一种β-Ga2O3沟槽MOS势垒肖特基（TMBS）二极管，该二极管具有正斜面崮和弧形底角的新型端子结构。器件的蚀刻后处理分别采用了氧气等离子体、氟化氢（HF）和四甲基氢氧化铵（TMAH）。测量结果表明，三种器件的比导通电阻值几乎相同，均为 2.60 mΩ-cm2。经过 O2 等离子、HF 和 TMAH 处理的器件的击穿电压分别为 1280 V、1440 V 和 1800 V。此外，值得注意的是，经过 O2 等离子处理的器件具有较低的反向漏电。此外，通过结合模拟和电容击穿测试，确定了器件的击穿位置位于场板边缘下的β-Ga2O3 接口。利用原子力显微镜和 XPS 分析了蚀刻后处理后 β-Ga2O3 的表面特性。结果表明，TMAH 处理对降低表面粗糙度的效果最显著，而 O2 等离子体处理对减少氧空位最有效。

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.