Shiju Yang, Libing Qian, Bo Zhang, Tingting Wang, Yunfei Li
{"title":"Improvement of the electrochemical performance of Bi2O3 by electron beam irradiation","authors":"Shiju Yang, Libing Qian, Bo Zhang, Tingting Wang, Yunfei Li","doi":"10.1007/s10854-024-13830-8","DOIUrl":null,"url":null,"abstract":"<div><p>The method of preparation is a critical factor affecting the structure and properties of Bi<sub>2</sub>O<sub>3</sub> material. In this work, Bi<sub>2</sub>O<sub>3</sub> was synthesized through calcination (denoted as Bi<sub>2</sub>O<sub>3</sub>–C) and hydrothermal methods (denoted as Bi<sub>2</sub>O<sub>3</sub>–H), utilizing bismuth-based metal–organic framework (Bi–MOF) as the precursor. As an electrode material for supercapacitors, Bi<sub>2</sub>O<sub>3</sub>–H demonstrated outstanding rate performance (515 F g<sup>−1</sup> at 50 A g<sup>−1</sup>) and remarkable cycle stability (74% retention after 4000 cycles). Subsequently, the Bi<sub>2</sub>O<sub>3</sub>-H underwent further processing through electron beam irradiation (EBI), resulting in a sample designated as Bi<sub>2</sub>O<sub>3</sub>–I. Following EBI treatment, the crystalline characteristics of Bi<sub>2</sub>O<sub>3</sub>–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH<sup>−</sup> from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi<sub>2</sub>O<sub>3</sub>–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi<sub>2</sub>O<sub>3</sub>-I electrode demonstrated superior capacitance (990 F<sup>−1</sup> at 2 A g<sup>−1</sup>), enhanced rate performance (585 F<sup>−1</sup> at 50 A g<sup>−1</sup>), and remarkable cycling stability (83% retention after 4000 cycles).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13830-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The method of preparation is a critical factor affecting the structure and properties of Bi2O3 material. In this work, Bi2O3 was synthesized through calcination (denoted as Bi2O3–C) and hydrothermal methods (denoted as Bi2O3–H), utilizing bismuth-based metal–organic framework (Bi–MOF) as the precursor. As an electrode material for supercapacitors, Bi2O3–H demonstrated outstanding rate performance (515 F g−1 at 50 A g−1) and remarkable cycle stability (74% retention after 4000 cycles). Subsequently, the Bi2O3-H underwent further processing through electron beam irradiation (EBI), resulting in a sample designated as Bi2O3–I. Following EBI treatment, the crystalline characteristics of Bi2O3–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH− from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi2O3–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi2O3-I electrode demonstrated superior capacitance (990 F−1 at 2 A g−1), enhanced rate performance (585 F−1 at 50 A g−1), and remarkable cycling stability (83% retention after 4000 cycles).
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.