Photoelectrical performance of Cu2MnSnS4/p-Si photosensor for solar energy applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
H. Alhummiany
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引用次数: 0

Abstract

The Cu2MnSnS4 (CMTS) film was prepared using the hydrothermal technique. The CMTS thin film was analyzed by the techniques of Ultraviolet–Visible (UV–Vis) spectroscopy, energy-dispersive X-ray (EDX or EDS), and scanning electron microscopy (SEM). To fabricate Al/Cu2MnSnS4 (CMTS)/p-Si/Al diode, the CMTS film was covered on p-Si wafer by a sol–gel spin-coating technique and the metallic contacts were prepared on film with pure aluminum. The current–voltage (I–V) properties of Al/Cu2MnSnS4 (CMTS)/p-Si/Al device were analyzed under dark and distinct illumination intensities (20, 40, 60, 80, and 100 mW/cm2). It was determined that the effect of light created a higher current compared to the dark current, and the reverse bias current increased approximately 80 times depending on the illumination intensity, which confirmed that the produced diode exhibited photoconductive behavior. The ideality factor (barrier height) values obtained as a result of the measurements performed in the dark and 100 mW/cm2 light intensity conditions of the produced device were found to be 3.85 (0.68 eV) and 4.54 (0.67 eV), respectively. Transient current measurements also supported this situation and also showed that the device could be enhanced as a photo-capacitor. In addition to these measurements, the effect of frequency and applied voltage on capacitance properties was investigated. The acquired results showed that both conductivity and capacitance were under a strong influence in reverse biasing. Considering all the results together, it has been shown that the used Cu2MnSnS4 (CMTS) material and the produced device are a strong candidate to be used in photovoltaic technology.

用于太阳能应用的 Cu2MnSnS4/p-Si 光传感器的光电性能
采用水热技术制备了 Cu2MnSnS4(CMTS)薄膜。利用紫外-可见(UV-Vis)光谱、能量色散 X 射线(EDX 或 EDS)和扫描电子显微镜(SEM)技术对 CMTS 薄膜进行了分析。为了制造铝/铜/锰/硒(CMTS)/对硅/铝二极管,采用溶胶-凝胶旋涂技术在对硅晶片上覆盖了 CMTS 薄膜,并在薄膜上用纯铝制备了金属触点。分析了 Al/Cu2MnSnS4 (CMTS)/p-Si/Al 器件在黑暗和不同光照强度(20、40、60、80 和 100 mW/cm2)下的电流-电压(I-V)特性。结果表明,与暗电流相比,光的作用产生了更大的电流,反向偏置电流根据照明强度的不同增加了约 80 倍,这证实了所生产的二极管具有光电导行为。在暗光和 100 mW/cm2 光照强度条件下对所制器件进行测量后发现,其理想化系数(势垒高度)值分别为 3.85 (0.68 eV) 和 4.54 (0.67 eV)。瞬态电流测量也证实了这一情况,同时还表明该器件可作为光电容器得到增强。除了这些测量之外,还研究了频率和外加电压对电容特性的影响。获得的结果表明,反向偏压对电导和电容都有很大影响。综合所有结果来看,所使用的 Cu2MnSnS4(CMTS)材料和所生产的器件是光伏技术的有力候选材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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