An efficient SiO2:Ce porous nanophosphor with high color purity to fulfil the cyan emission gap of field emission displays (FEDs)

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-12 DOI:10.1007/s10854-024-13843-3

I. M. Nagpure

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Abstract

An efficient SiO₂:Ce nanophosphor has been synthesized by fuel assisted combustion method, later annealed in a reducing atmosphere to achieve phase stability and to monitor the effect on its CL properties. The formation of low–quartz’s structure is reported by using XRD analysis. The spherical porous nanosized morphology is revealed by HRTEM analysis. The porous nanophosphor is excited by electron beam exposure at pressure of 10^{− 6} Torr with different electric power (i.e. voltage of 1−5 keV and current of 3−18 µA). A stable cyan (blue−green) emission has been recorded regardless of change in applied electrical power. The minor increase in the CL intensity is also noted for annealed nanophosphor. In the RGB color model, used to create all the colours on a computer or television display, cyan is made by mixing equal amounts of green and blue light. An efficient and stable CL broadband emission extending from 300 to 600 nm maximum at 440−525 nm is recorded makes the SiO₂:Ce porous nanophosphor a suitable candidate to fulfil the cyan emission gap of the Field emission displays (FEDs).

Abstract Image

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具有高色纯度的高效 SiO2:Ce 多孔纳米荧光粉，可满足场发射显示器 (FED) 的青色发射间隙要求

通过燃料辅助燃烧法合成了一种高效的 SiO2:Ce 纳米磷，随后在还原气氛中进行退火处理，以实现相的稳定性，并监测其对 CL 特性的影响。通过 XRD 分析，报告了低石英结构的形成。HRTEM 分析显示了球形多孔纳米形态。多孔纳米磷在 10- 6 托压力和不同功率（即电压 1-5 keV，电流 3-18 µA）的电子束照射下被激发。无论应用的电功率如何变化，都能记录到稳定的青色（蓝绿色）发射。退火后的纳米磷的青绿光强度也略有增加。在 RGB 色彩模型中，青色是由等量的绿光和蓝光混合而成的。二氧化硅：Ce 多孔纳米荧光粉具有高效稳定的 CL 宽带发射，发射波长从 300 纳米到 600 纳米不等，在 440-525 纳米波长处达到最大值，因此是满足场发射显示器（FED）青色发射间隙的合适候选材料。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.