Optimization of microstructure and dielectric properties of BCTZ-based ceramics using two-step sintering method

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-11 DOI:10.1007/s10854-024-13815-7

Xiong Hou, Jialing Xu, Haofeng Jing, Hongtao Yu

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Abstract

In this study, the (Ba, Ca)(Ti, Zr)O₃-based dielectric ceramics were prepared by the two-step sintering method. The effects of the first step sintering temperature (T1) on microscopic morphology and dielectric properties were investigated in detail. The two-step sintering method could effectively reduce the grain size and form a uniformly distributed microstructure. As a result, the temperature coefficient of capacitance (TCC) and the breakdown strength (BDS) were improved obviously, compared with the traditional one-step sintering. The finite element simulation of ceramics obtained by COMSOL was used further to reveal the functions of the different sintering conditions. When the optimum T1 was chosen, the average grain size decreased to 0.53 µm, with a simulated breakdown time of 0.78 s, the TCC was − 45.8% to 1.8% during the temperature range of − 30 to 85 °C and the BDS reached 165 ± 0.5 kV/cm, accompanied by a high dielectric constant (ε_r) of 6841 ± 103 and a low dielectric loss (tanδ) (0.51% ± 0.03%).

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采用两步烧结法优化 BCTZ 基陶瓷的微观结构和介电性能

本研究采用两步烧结法制备了 (Ba, Ca)(Ti, Zr)O3 基介电陶瓷。详细研究了第一步烧结温度（T1）对微观形貌和介电性能的影响。两步烧结法能有效减小晶粒尺寸，形成均匀分布的微观结构。因此，与传统的一步烧结法相比，电容温度系数（TCC）和击穿强度（BDS）得到了明显改善。通过 COMSOL 获得的陶瓷有限元模拟进一步揭示了不同烧结条件的作用。当选择最佳 T1 时，平均晶粒尺寸减小到 0.53 µm，模拟击穿时间为 0.78 s，在 - 30 至 85 °C 的温度范围内，TCC 为 - 45.8% 至 1.8%，BDS 达到 165 ± 0.5 kV/cm，同时介电常数（εr）达到 6841 ± 103，介电损耗（tanδ）较低（0.51% ± 0.03%）。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.