Effect of hydrothermal temperature on the structural and electrochemical properties of MnO2-based supercapacitors

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Eka Nurfani, Paulus Fau, Nur I. Khamidy, Resti Marlina
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引用次数: 0

Abstract

Hydrothermally synthesized manganese dioxide (MnO2) has attracted significant attention in supercapacitor applications due to its exceptional electrochemical properties. This research systematically explores the influence of hydrothermal temperatures of 105 °C (M1), 120 °C (M2), and 150 °C (M3) on the structural and electrochemical characteristics of MnO2-based supercapacitors. From field effect scanning electron microscopy (FESEM) images, the average diameter of MnO2 nanorods is 139 ± 3 nm, 140 ± 5 nm, and 156 ± 3 nm for M1, M2, and M3. The crystalline quality of MnO2 increases by increasing the hydrothermal temperature (M3 sample). Shifting the Raman peak from 637 to 654 cm−1 is observed due to the enhancement in crystallinity and nanorod size in the M3 sample. Higher surface area for smaller nanorods (M1) is also confirmed by the BET (Brunauer–Emmett–Teller) technique. At the scan rate of 10 mV/s, the specific capacitance obtained is 142 (M1), 135 (M2), and 131 (M3) F/g. By elucidating the intricate relationship between hydrothermal temperature and the resultant MnO2 properties, this study provides valuable insights for optimizing the synthesis conditions to enhance the performance of MnO2-based supercapacitors.

水热温度对基于 MnO2 的超级电容器的结构和电化学特性的影响
水热合成的二氧化锰(MnO2)因其优异的电化学特性在超级电容器应用中备受关注。本研究系统地探讨了 105 ℃(M1)、120 ℃(M2)和 150 ℃(M3)水热温度对基于 MnO2 的超级电容器的结构和电化学特性的影响。从场效应扫描电子显微镜(FESEM)图像来看,M1、M2 和 M3 的 MnO2 纳米棒平均直径分别为 139 ± 3 nm、140 ± 5 nm 和 156 ± 3 nm。MnO2 的结晶质量随着水热温度的升高而增加(M3 样品)。由于 M3 样品的结晶度和纳米棒尺寸增大,拉曼峰从 637 cm-1 移至 654 cm-1。较小纳米棒(M1)的较高表面积也通过 BET(Brunauer-Emmett-Teller)技术得到了证实。在 10 mV/s 的扫描速率下,得到的比电容分别为 142(M1)、135(M2)和 131(M3)F/g。通过阐明水热温度与 MnO2 性能之间的复杂关系,本研究为优化合成条件以提高基于 MnO2 的超级电容器的性能提供了宝贵的见解。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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