Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-09-23 DOI:10.1007/s10825-024-02226-w

Debaleen Biswas, Arijit Bose, Hidemasa Takahashi, Yuji Ando, Akio Wakejima

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引用次数: 0

Abstract

AlGaN/GaN HEMT-based gated-anode diode (GAD) has been investigated with a physics-based TCAD simulation tool to understand its electrical transport characteristics. The simulation study predicted that the GAD exhibited low turn-on voltage (\(V_{\text {on}}\) = + 0.77 V) over a conventional Schottky barrier diode (SBD). However, the GAD suffers from low breakdown voltage (\(V_{\text {BD}}\)) because of strong electric field crowding at the gate edge. On the other hand, a δ-doped GaN cap (δ-DGC) layer has been able to spread out the electric field along the channel. With such modification in the epi-structure, a \(V_{\text {BD}}\) of ~ 335 V could be achieved with the gated-anode-to-cathode distance (\(L_{\text {gac}}\)) of 10 μm. TCAD-based RF simulation and small-signal S-parameter analysis were carried out to evaluate the expected RF performance of the GADs. From the transient response of the extracted small-signal equivalent circuit parameters, the cut-off frequency (\(f_{\text {c}}\)) of the GADs with δ-DGC layer was 35.6 GHz at the exact turn-on condition (\(V_{\text {on}}\)) of the device.

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用于 WPT 应用的射频和微波整流器的门控阳极二极管：直流和射频特性模拟研究

基于 AlGaN/GaN HEMT 的栅控阳极二极管 (GAD) 采用基于物理的 TCAD 仿真工具进行了研究，以了解其电气传输特性。模拟研究预测，与传统的肖特基势垒二极管（SBD）相比，GAD 的导通电压较低（\(V_{\text {on}}\) = + 0.77 V）。然而，由于栅极边缘的强电场拥挤，GAD 的击穿电压（\(V_\text {BD}}\）较低。另一方面，掺杂δ的氮化镓盖层（δ-DGC）能够沿着沟道分散电场。通过对外延结构进行这样的修改，在栅阳极到阴极的距离（L_{text {gac}}\) 为 10 μm 的情况下，可以达到 ~ 335 V 的电压（V_{text {BD}}\ ）。为了评估 GAD 的预期射频性能，我们进行了基于 TCAD 的射频仿真和小信号 S 参数分析。从提取的小信号等效电路参数的瞬态响应来看，在器件的精确导通条件下（\(V_\text {on}}\），带有 δ-DGC 层的 GAD 的截止频率（\(f_\text {c}}\ ）为 35.6 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.