Study of the ISO-FDTD algorithm for processing higher-order dielectric function in SF-FDTD

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-11-01 DOI:10.1007/s10825-024-02230-0

Ke-Da Gu, Jin Xie, Hong-Wei Yang

引用次数: 0

Abstract

We use an improved shift operator finite-difference time-domain (ISO-FDTD) algorithm, previously proposed by others, to further process more complex dielectric functions including critical models and several higher-order Lorentz models that we fitted ourselves. These function models have a total of 6–8 sub-terms, and each sub-term consists of two complex poles (Lorentz model). This work supports the universal applicability of the ISO-FDTD algorithm for processing higher-order complex dispersive materials. We applied this ISO-FDTD algorithm in split-field FDTD (SF-FDTD) to simulate dispersion media under oblique incidence. The simulation results agree well with the analytical solutions. Thus, this approach provides researchers with an alternative option apart from auxiliary differential equations (ADE) or piecewise linear recursive convolution (PLRC) methods when processing high-order dispersive media in SF-FDTD.

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在 SF-FDTD 中处理高阶介电函数的 ISO-FDTD 算法研究

我们使用他人之前提出的改进型移位算子有限差分时域（ISO-FDTD）算法，进一步处理更复杂的介电函数，包括临界模型和我们自己拟合的几个高阶洛伦兹模型。这些函数模型共有 6-8 个子项，每个子项由两个复极点组成（洛伦兹模型）。这项工作证明了 ISO-FDTD 算法在处理高阶复杂色散材料方面的普遍适用性。我们将这种 ISO-FDTD 算法应用于分场 FDTD（SF-FDTD），模拟斜入射条件下的色散介质。模拟结果与分析解十分吻合。因此，在用 SF-FDTD 处理高阶色散介质时，这种方法为研究人员提供了除辅助微分方程 (ADE) 或片断线性递归卷积 (PLRC) 方法之外的另一种选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.