Characteristic analysis of a line-touch mode capacitive pressure-sensitive structure

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-09-21 DOI:10.1007/s10825-024-02234-w

Rongyan Chuai, Jianxing Wang, Xin Li, He Zhang, Zhihao Zhang

引用次数: 0

Abstract

Capacitive pressure sensors have the advantages of high accuracy and sensitivity compared to piezoresistive pressure sensors, but have serious nonlinearity problems. Although the touch mode capacitive pressure-sensitive structure has improved this issue, it has introduced a large hysteresis. To restrain this effect, a line-touch mode capacitive MEMS pressure-sensitive structure is proposed. A recess on the lower electrode plate of this structure makes the contact between the upper and lower electrode plates appears as the line-touch, and the touched area is almost zero, which can greatly minimize the hysteresis caused by the electrode plate contact. Analysis shows that the linear response range of this pressure-sensitive structure can be expanded several times more than that of the touch mode capacitive pressure-sensitive structure, while the nonlinearity is significantly reduced.

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线触模式电容式压敏结构的特性分析

与压阻压力传感器相比，电容式压力传感器具有精度高、灵敏度高的优点，但存在严重的非线性问题。虽然触摸模式电容式压力敏感结构改善了这一问题，但却带来了较大的滞后。为了抑制这种效应，我们提出了一种线触模式电容式 MEMS 压力敏感结构。该结构的下电极板上有一个凹槽，使得上下电极板之间的接触表现为线接触，被触面积几乎为零，从而大大减小了电极板接触造成的滞后。分析表明，这种压敏结构的线性响应范围比触摸模式的电容式压敏结构扩大了数倍，而非线性度则显著降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.