Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes

IF 18.5 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Xiaoyu Yang, Yongqiang Ji, Qiuyang Li, Qixuan Zhong, Hong Li, Zhangyuchang Lu, Hao‐Hsin Chen, Yanju Wang, An Hu, Shunde Li, Li Ma, Le Li, Yuzhuo Zhang, Yu Chen, Lichen Zhao, Jiang Wu, Xinqiang Wang, Changjun Lu, Rui Zhu
{"title":"Group‐VA Doped ZnO Injection Layer for Bright and Efficient Perovskite Light‐Emitting Diodes","authors":"Xiaoyu Yang, Yongqiang Ji, Qiuyang Li, Qixuan Zhong, Hong Li, Zhangyuchang Lu, Hao‐Hsin Chen, Yanju Wang, An Hu, Shunde Li, Li Ma, Le Li, Yuzhuo Zhang, Yu Chen, Lichen Zhao, Jiang Wu, Xinqiang Wang, Changjun Lu, Rui Zhu","doi":"10.1002/adfm.202413517","DOIUrl":null,"url":null,"abstract":"Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high‐performance quantum‐dot and perovskite light‐emitting diodes (PeLEDs), while group‐VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as‐fabricated Bi‐doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n‐type nature, and appropriate band alignment with FAPbI<jats:sub>3</jats:sub> (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI<jats:sub>3</jats:sub> crystals grown into flat nanocylinder domains with higher crystallinity and area‐thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near‐infrared radiance of 684 W sr<jats:sup>−1</jats:sup> m<jats:sup>−2</jats:sup>, and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":null,"pages":null},"PeriodicalIF":18.5000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adfm.202413517","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Heteroatom doping of the ZnO electron injection layer (EIL) is widely applied to the fabrication of high‐performance quantum‐dot and perovskite light‐emitting diodes (PeLEDs), while group‐VA atomic dopant is rarely studied. Here, VA bismuth (Bi) with strong metallicity is screened as a substitution dopant to regulate the colloid size, surface terminal, and defect density of the ZnO precursor. The as‐fabricated Bi‐doped ZnO (ZnBiO) EIL shows enhanced conductivity, passivated trap states, more n‐type nature, and appropriate band alignment with FAPbI3 (FA: formamidinium), contributing to smooth injection paths with minimal transport losses. Promoted by inhibited hydroxyl terminations of ZnBiO, the FAPbI3 crystals grown into flat nanocylinder domains with higher crystallinity and area‐thickness ratio, leading to a champion PeLED efficiency of 22.3%, a high near‐infrared radiance of 684 W sr−1 m−2, and nearly an order of magnitude extended operational stability, which shows great promise of ZnBiO as the optimal EIL for various LED application scenarios beyond classical ZnMgO.
掺杂基团-VA 的氧化锌注入层用于明亮高效的 Perovskite 发光二极管
氧化锌电子注入层(EIL)的杂原子掺杂被广泛应用于高性能量子点和过氧化物发光二极管(PeLED)的制造,而族-VA 原子掺杂却很少被研究。本文筛选了具有强金属性的 VA 铋(Bi)作为替代掺杂剂,以调节 ZnO 前驱体的胶体尺寸、表面终端和缺陷密度。制备出的掺铋氧化锌(ZnBiO)EIL 显示出更强的导电性、钝化阱态、更多的 n 型性质,以及与 FAPbI3(FA:甲脒)的适当带排列,从而有助于形成具有最小传输损耗的平滑注入路径。在 ZnBiO 受抑制的羟基端接的促进下,FAPbI3 晶体生长成具有更高结晶度和面积厚度比的扁平纳米圆柱畴,使 PeLED 效率达到 22.3%,近红外辐射率高达 684 W sr-1 m-2,工作稳定性提高了近一个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Functional Materials
Advanced Functional Materials 工程技术-材料科学:综合
CiteScore
29.50
自引率
4.20%
发文量
2086
审稿时长
2.1 months
期刊介绍: Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信