Nitrogen-doped carbon quantum dot-decorated In2O3 synaptic transistors for neuromorphic computing

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-11-08 DOI:10.1063/5.0231655

Muhammad Zahid, Muhammad Irfan Sadiq, Chenxing Jin, Jingwen Wang, Xiaofang Shi, Wanrong Liu, Fawad Aslam, Yunchao Xu, Muhammad Tahir, Junliang Yang, Jia Sun

{"title":"Nitrogen-doped carbon quantum dot-decorated In2O3 synaptic transistors for neuromorphic computing","authors":"Muhammad Zahid, Muhammad Irfan Sadiq, Chenxing Jin, Jingwen Wang, Xiaofang Shi, Wanrong Liu, Fawad Aslam, Yunchao Xu, Muhammad Tahir, Junliang Yang, Jia Sun","doi":"10.1063/5.0231655","DOIUrl":null,"url":null,"abstract":"Nitrogen-doped carbon quantum dots (N-CQDs) are promising materials for electronic devices due to their variable bandgap and structural stability. Here, we integrate N-CQDs into In2O3 synaptic transistors with electrolyte gating, resulting in a hybrid structure. The surface functional groups and defects of N-CQDs empower the charge trapping mechanism, permitting controlled conduction and charge regulation, which are crucial for emulating linear and symmetric artificial synaptic devices. Devices incorporating N-CQDs demonstrate enhanced stability and memory characteristics, low energy consumption, consistent retention, and a significant hysteresis window across multiple voltage cycles. Finally, the study emulates biological synapses and cognitive functions, achieving an energy consumption of 10 fJ per synaptic event and a pattern recognition accuracy of 91.2% on the MNIST dataset in hardware neural networks. This work demonstrates the potential of well-manipulating charge trapping in N-CQDs to develop high-performance, nonvolatile synaptic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0231655","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Nitrogen-doped carbon quantum dots (N-CQDs) are promising materials for electronic devices due to their variable bandgap and structural stability. Here, we integrate N-CQDs into In2O3 synaptic transistors with electrolyte gating, resulting in a hybrid structure. The surface functional groups and defects of N-CQDs empower the charge trapping mechanism, permitting controlled conduction and charge regulation, which are crucial for emulating linear and symmetric artificial synaptic devices. Devices incorporating N-CQDs demonstrate enhanced stability and memory characteristics, low energy consumption, consistent retention, and a significant hysteresis window across multiple voltage cycles. Finally, the study emulates biological synapses and cognitive functions, achieving an energy consumption of 10 fJ per synaptic event and a pattern recognition accuracy of 91.2% on the MNIST dataset in hardware neural networks. This work demonstrates the potential of well-manipulating charge trapping in N-CQDs to develop high-performance, nonvolatile synaptic devices.

查看原文本刊更多论文

用于神经形态计算的掺氮碳量子点装饰 In2O3 突触晶体管

掺氮碳量子点（N-CQDs）具有可变带隙和结构稳定性，是一种很有前途的电子器件材料。在这里，我们将 N-CQDs 集成到具有电解质门控功能的 In2O3 突触晶体管中，形成了一种混合结构。N-CQDs 的表面官能团和缺陷增强了电荷捕获机制，允许可控传导和电荷调节，这对于模拟线性和对称的人工突触器件至关重要。含有 N-CQDs 的器件具有更强的稳定性和记忆特性，能耗低，保持稳定，并在多个电压周期内具有显著的滞后窗口。最后，该研究模拟了生物突触和认知功能，实现了每次突触事件的能耗为 10 fJ，在硬件神经网络的 MNIST 数据集上的模式识别准确率达到 91.2%。这项工作证明了在 N-CQDs 中良好操纵电荷捕获以开发高性能、非易失突触器件的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.