High-Efficiency Platinum-Band CMOS Rectifier Using Modified Body-Biasing Technique

Abstract

This letter introduces a novel approach to achieve high efficiency in high-power rectification using 180-nm complementary metal-oxide–semiconductor (CMOS) technology. The proposed rectifier targets the utilization of electromagnetic waves within the platinum band, operating within the frequency range of 0.6–0.9 GHz. Unlike conventional body-biasing techniques using pMOS transistors, where the output terminal is used for biasing, the proposed method employs biasing through the drain voltage of respective transistor. This approach results in higher output voltage for increased input power. Measurement results demonstrate outstanding power conversion efficiency (PCE) exceeding 60% and an output voltage surpassing 9 V across the 0.6–0.9 GHz range at 16-dBm input power ( ${P}_{\text {in}}$ ). Furthermore, the peak PCE of 67.5% was achieved at a carrier frequency of 0.7 GHz.