High temperature evolution of interfacial metal film bonding two 4H-SiC substrates

Abstract

The high temperature behavior of thin metal films (tungsten and titanium) confined between two off-axis single crystal SiC substrates is investigated. Through the application of transmission and scanning transmission electron microscopy, scanning electron microscopy, and X-ray scattering techniques, we examine the phase and morphology changes induced by high temperature annealing in thin layers consisting of these materials, as well as at their interfaces with SiC. Upon high-temperature annealing, a uniform and continuous W film formed by low-temperature deposition undergoes a transition to an array of discontinuous domains surrounded by a direct SiC/SiC interface. In contrast, a Ti film remains continuous with a strong thickness alteration. In parallel to step-bunching process of the internal SiC surfaces, both materials transform into new crystalline phases which contain Si and/or C atoms and achieve an epitaxial relationship with the SiC structures. The experimental findings are discussed in terms of dewetting phenomena and analyzed in light of potential chemical and structural reactions that may occur during interface reconstructions.