Yusa Chen , Meizhang Wu , Jianghui Mo , Yan Liu , Yuwei Zhai , Wengang Wu , Aihua Wu , Faguo Liang
{"title":"Thermoreflectance property of gallium nitride","authors":"Yusa Chen , Meizhang Wu , Jianghui Mo , Yan Liu , Yuwei Zhai , Wengang Wu , Aihua Wu , Faguo Liang","doi":"10.1016/j.mejo.2024.106468","DOIUrl":null,"url":null,"abstract":"<div><div>Based on the principle of thermoreflectance (TR) and experimental data, we have determined the TR coefficients of GaN in the visible and near-ultraviolet spectrum range. The results indicate that the TR coefficient of GaN is larger, approximately <span><math><mrow><msup><mn>10</mn><mrow><mo>−</mo><mn>3</mn></mrow></msup><msup><mi>K</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span> when the illumination wavelength falls within the near-ultraviolet range. However, within the visible spectrum, the TR coefficient is low, ranging between <span><math><mrow><msup><mn>10</mn><mrow><mo>−</mo><mn>5</mn></mrow></msup><msup><mi>K</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span> to <span><math><mrow><msup><mn>10</mn><mrow><mo>−</mo><mn>6</mn></mrow></msup><msup><mi>K</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span>. This suggests that GaN is more responsive to temperature changes within the near-ultraviolet spectrum. The paper provides a physics-mechanism-based explanation for this phenomenon. These results have implications for the thermal design and analysis of GaN-based microelectronic devices.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124001723","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Based on the principle of thermoreflectance (TR) and experimental data, we have determined the TR coefficients of GaN in the visible and near-ultraviolet spectrum range. The results indicate that the TR coefficient of GaN is larger, approximately when the illumination wavelength falls within the near-ultraviolet range. However, within the visible spectrum, the TR coefficient is low, ranging between to . This suggests that GaN is more responsive to temperature changes within the near-ultraviolet spectrum. The paper provides a physics-mechanism-based explanation for this phenomenon. These results have implications for the thermal design and analysis of GaN-based microelectronic devices.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.