Chirality reversal quantum phase transition in flat-band topological insulators.

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
V I Litvinov
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引用次数: 0

Abstract

Quantum anomalous Hall effect generates dissipationless chiral conductive edge states in materials with large spin-orbit coupling and strong, intrinsic, or proximity magnetisation. The topological indexes of the energy bands are robust to smooth variations in the relevant parameters. Topological quantum phase transitions between states with different Chern numbers require the closing of the bulk bandgap:|C|=1→C=1/2corresponds to the transition from a topological insulator to a gapless state ink=0- quantum anomalous semimetal. Within the Bernevig-Hughes-Zhang (BHZ) model of 2D topological quantum well, this study identifies another type of topological phase transition induced by a magnetic field. The transitionC=±1→C=∓1occurs when the monotonic Zeeman field reaches the threshold value and thus triggers the reversal of edge modes chirality. The calculated threshold depends on the width of the conduction and valence bands and is more experimentally achievable the flatter the bands. The effect of the topological phase transition|ΔC|=2can be observed experimentally as a jump in magnetoresistance.

平带拓扑绝缘体中的手性反转量子相变。
量子反常霍尔效应能在具有大自旋轨道耦合和强、本征或邻近磁化的材料中产生无耗散手性导电边缘态。能带的拓扑指数对相关参数的平滑变化很稳定。不同切尔数状态之间的拓扑量子相变需要关闭体带隙:C=1→C=1/2 相当于从拓扑绝缘体过渡到 k=0 态量子反常半金属的无间隙状态。在二维拓扑量子阱的 Bernevig-Hughes-Zhang 模型中,本研究发现了磁场诱导的另一种拓扑相变。当单调齐曼场达到阈值时,会发生 C=±1→C=∓1 的转变,从而引发边缘模式手性的逆转。计算出的阈值取决于导带和价带的宽度,而且越平坦的导带在实验中越容易实现。拓扑相变 ∆C=2 的影响可以通过实验观察到,即磁阻的跃迁。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter 物理-物理:凝聚态物理
CiteScore
5.30
自引率
7.40%
发文量
1288
审稿时长
2.1 months
期刊介绍: Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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