Effects of Thermal Energy on the Formation of Lattice Strain in VO2 Thin Films Grown on TiO2(001).

Abstract

Film thickness is a well-known experimental parameter for controlling lattice strain in oxide films. However, due to environmental and resource conservation considerations, films need to be as thin as possible, increasing the need to find alternative factors for strain management. Herein, we present the importance of thermal energy as a factor for the formation of lattice strain in the oxide films, specifically focusing on the effects of laser fluence during pulsed laser deposition (PLD) on the in-plane lattice strain of vanadium dioxide (VO₂) thin films grown on titanium dioxide (TiO₂) (001). VO₂ thin films were deposited using a KrF excimer laser (λ = 248 nm) at laser fluences ranging from 0.88 to 1.70 J/cm². The film thickness ranged from 10-15 nm, below the critical thickness. Films grown at higher laser fluences exhibited smooth surfaces and completely strained in-plane lattices. In contrast, films grown at lower laser fluences displayed numerous small islands and relaxed in-plane lattice strain. The metal-insulator transition (MIT) temperature was lower for films grown at higher laser fluencies compared to those grown at lower laser fluences. It was also revealed that Ti-V interdiffusion occurs, forming a solid solution (V_1-xTi_xO₂) near the interface. These observations suggest that the thermal energy of the particles, influenced by laser fluence, is a critical factor in the formation of lattice strain in metal oxide films and also that laser fluence in PLD is an effective experimental parameter for strain management in oxide films. Our findings enhance the understanding of lattice strain formation in metal oxides and offer insights for establishing effective methods for controlling lattice strain in metal oxide films.