Measuring the radiation hardness of terahertz devices for space applications

Abstract

The application of terahertz technology in space is frontier for the development of 6G technologies. Terahertz transceiver devices based on gallium arsenide Schottky barrier diodes (GaAs SBDs) have the characteristics of small size, light weight and low power consumption, making them suitable for application on spacecraft. However, there is currently a lack of experimental assessments on their space adaptability. Here, we study the radiation hardness of terahertz devices to determine their adaptability in complex space environments. We exposed GaAs SBDs and terahertz multipliers as typical terahertz devices to gamma rays and protons. The experimental results showed that the terahertz devices exhibited good tolerance to protons, but prolonged exposure to gamma rays could significantly increase the leakage current of the GaAs SBDs and alter its C-V characteristics, leading to the failure of the terahertz multiplier. Nevertheless, the terahertz devices maintained a good level of radiation hardness, making them highly suitable for use in Low Earth Orbit (LEO) satellites. The comparison between the results of proton and gamma ray tests indicated that the terahertz devices exhibited high inherent radiation hardness against displacement damage but were more sensitive to ionization damage, requiring higher shielding requirements. Terahertz technology holds tremendous potential for application in high-speed, high-capacity space communication missions, yet there currently exists a lack of research on the space adaptability of its key components. The authors have conducted radiation hardness testing of gallium arsenide terahertz devices through ground-based simulated irradiation experiments.