Zan Li , Tian Yang , Jian Li , Jinyu Ma , Xinjing Huang
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引用次数: 0
Abstract
Transmitting data from the seabed platform to relay buoys using wireless transmission techniques is becoming the main approach for seabed platform data retrieval, and data transmission via underwater acoustic waves offers certain advantages compared to that via underwater optical or electromagnetic waves. Hydrophones play a crucial role in underwater acoustic transmission, and low-cost, miniaturized, high-sensitive hydrophones based on resonance cavity meet the demands of seabed platform data retrieval scenarios. This paper proposes a multi-resonance-cavity hydrophone for underwater acoustic data transmission. The acoustic resonance characteristics of the cavity is studied through theoretical analysis and simulations. An eight-layer spherical cavity hydrophone is designed and fabricated, and the acoustic sensing characteristics and performances of the hydrophone are simulated and tested. Finally, underwater acoustic data receiving tests using the proposed hydrophone are conducted in a lake, demonstrating the hydrophone’s ability to accurately receive acoustic data at the baud rate of 145.45 bps with no error.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...