Enhanced spintronic and electronic properties in MTe2-GdCl2 (M=Mo, W) heterojunctions

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Anwar Ali , Bin Lu , Iltaf Muhammad , Ismail Shahid , Iqtidar Ahmad , Nayab Arif , Wei Tang , Fuming Xu , Yu-Jia Zeng
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Abstract

Two-dimensional ferromagnetic heterojunctions with direct bandgaps and high Curie temperatures (TC) are promising candidates for applications in nanoelectronics and spintronics. Here, we design a Mo(W)Te₂-GdCl₂ heterojunction by integrating experimentally synthesized monolayer Mo(W)Te₂ with recently predicted ferromagnetic monolayer GdCl2. Our first-principles calculations reveal that these heterojunctions display a type-II (staggered) band alignment with a narrow direct bandgap ranging from 1.10 to 1.23 eV, using the HSE06 method. We have incorporated spin-orbit coupling and conducted Monte Carlo simulations to precisely estimate the magnetic ground states of these systems. We find that spin-orbit coupling plays a crucial role in the valence band splitting at the K-point in both heterojunctions. The magnetic anisotropy, TC, and optical performance of individual monolayers are enhanced within these heterojunctions. Under compressive strain, the TC of the heterojunctions increases significantly, reaching about 278 K at -7 % strain, due to strengthened super-exchange interactions between Gd-d and Cl-p orbitals and enhanced interlayer charge transfer. In addition, the band alignment shifts from type-II to type-I under -3 % compressive strain, while tensile strain maintains the type-II band alignment. Our findings offer a viable pathway for developing ferromagnetic semiconducting heterojunctions suitable for nanoelectronic and spintronic applications.

Abstract Image

增强 MTe2-GdCl2(M=Mo,W)异质结的自旋电子特性
具有直接带隙和高居里温度 (TC) 的二维铁磁异质结在纳米电子学和自旋电子学中的应用前景广阔。在这里,我们通过将实验合成的单层 Mo(W)Te₂ 与最近预测的铁磁单层 GdCl2 相结合,设计出了 Mo(W)Te₂-GdCl₂ 异质结。我们使用 HSE06 方法进行的第一原理计算显示,这些异质结显示出 II 型(交错)带排列,直接带隙很窄,在 1.10 至 1.23 eV 之间。我们加入了自旋轨道耦合,并进行了蒙特卡罗模拟,以精确估计这些系统的磁基态。我们发现,自旋轨道耦合在这两种异质结的 K 点价带分裂中起着至关重要的作用。在这些异质结中,单个单层的磁各向异性、TC 和光学性能都得到了增强。在压缩应变作用下,异质结的 TC 显著增加,在应变为 -7% 时达到约 278 K,这是由于 Gd-d 和 Cl-p 轨道之间的超交换相互作用增强以及层间电荷转移增强所致。此外,在-3%的压缩应变下,带排列从II型转变为I型,而拉伸应变则保持了II型带排列。我们的发现为开发适用于纳米电子和自旋电子应用的铁磁半导体异质结提供了一条可行的途径。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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