Investigation on dysprosium (Dy3+) doped lithium boro-phosphate glass for light-emitting diode (LED) and supercapacitor applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
P. Vinothkumar, S. Praveen Kumar, A. Anancia Grace, T. Sivakumar, A. Paul Dhinakaran
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引用次数: 0

Abstract

Dy3+ doped B2O3-P2O5-Ta2O5-Li2CO3- Al2O3-NaF-Dy2O3 (BPTLAND) glass was prepared using the melt-quenching method. The Dy3+ doped BPTLAND glass amorphous form was confirmed by an analysis of powder X-ray diffraction. Using EDAX and SEM analyses, the chemical compositions and surface morphology of the prepared glass were examined. FTIR and Raman analysis identified the presence of borate and phosphate groups. Absorption spectroscopy examined the glass’s optical characteristics, with a refractive index of 1.4 at 2 eV and an optical band gap found to be an indirect band gap. The band gap is determined by the intercept of the tangent to the x-axis, which is 2.80 eV. Photoluminescence research revealed dominating emission peaks at 573 nm wavelength. The CIE chromaticity coordinates of the prepared glass were found to exhibit daylight, are x = 0.3647, y = 0.4762, and the Correlated color temperature was found to be 4823 K. The produced glass’s ferromagnetic characteristics were confirmed using VSM analysis to evaluate the hysteresis loop’s retentivity and coercivity of magnetic behavior. Using galvanostatic charge–discharge (GCD), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV), the electrochemical properties of the generated electrodes in a 5 M KOH electrolyte were examined. After 2000 cycles, the glass electrode doped with Dy3+ (BPTLAND) displays the greatest specific capacitance value (258.12 F g−1 for GCD). Scan rate behavior was unique and exhibited redox behavior. In addition, the anodic–cathodic peak difference increases with increasing peak density as the scan rate increases, suggesting that the material is quasi-reversible. The flawless double capacitance characteristic of Dy3+ doped BPTLAND glass was demonstrated by each CV, which showed a regular rectangle. The charge transfer resistance for this electrode was found to be 34.53 (Ω cm2) whereas the ohmic resistance is 14.21 (Ω cm2). The working electrode’s capacity for long cycling performance was consistent CV curve after 5000 cycles indicating the electrode maintains good structural and electrochemical stability over prolonged cycling. The findings therefore confirmed that Dy3+ doped lithium borophosphate BPTLAND glass has a great deal of promise for advancement as electrode materials in the context of LED and supercapacitor applications.

研究掺杂镝(Dy3+)的硼磷酸盐锂玻璃在发光二极管(LED)和超级电容器中的应用
采用熔淬法制备了掺杂 Dy3+ 的 B2O3-P2O5-Ta2O5-Li2CO3- Al2O3-NaF-Dy2O3 (BPTLAND) 玻璃。粉末 X 射线衍射分析证实了掺杂 Dy3+ 的 BPTLAND 玻璃的非晶形态。通过 EDAX 和 SEM 分析,研究了所制备玻璃的化学成分和表面形态。傅立叶变换红外光谱和拉曼分析确定了硼酸盐基团和磷酸基团的存在。吸收光谱检测了玻璃的光学特性,发现其在 2 eV 时的折射率为 1.4,光学带隙为间接带隙。带隙由 x 轴切线的截距决定,截距为 2.80 eV。光致发光研究显示,在 573 纳米波长处有主要的发射峰。制备玻璃的 CIE 色度坐标为 x = 0.3647,y = 0.4762,日光色度坐标为 x = 0.3647,y = 0.4762,相关色温为 4823 K。利用电静态充放电(GCD)、电化学阻抗谱(EIS)和循环伏安法(CV),考察了在 5 M KOH 电解液中生成的电极的电化学特性。经过 2000 次循环后,掺杂 Dy3+ 的玻璃电极(BPTLAND)显示出最大的比电容值(GCD 为 258.12 F g-1)。扫描速率行为独特,表现出氧化还原行为。此外,随着扫描速率的增加,阳极-阴极峰值差随着峰值密度的增加而增大,这表明该材料具有准可逆性。掺杂了 Dy3+ 的 BPTLAND 玻璃的双电容特性完美无瑕,每个 CV 值都呈现出规则的矩形。该电极的电荷转移电阻为 34.53 (Ω cm2),而欧姆电阻为 14.21 (Ω cm2)。工作电极的长期循环性能容量在 5000 次循环后的 CV 曲线上保持一致,表明电极在长期循环中保持了良好的结构和电化学稳定性。因此,研究结果证实,掺杂 Dy3+ 的硼磷酸锂 BPTLAND 玻璃作为电极材料,在 LED 和超级电容器应用方面大有可为。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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