Improvement of the Performance of 885 nm Laser Diodes by Using the High Al Component Barrier Layers

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2024-10-21 DOI:10.1109/LPT.2024.3483934

Renbo Han;Aiyi Qi;Hongwei Qu;Xuyan Zhou;Wanhua Zheng

引用次数: 0

Abstract

885 nm laser diode with high Al component AlGaAs barrier layers (HABLs) are designed and fabricated to mitigate carrier leakage. As the height of the potential barrier increases, the internal quantum efficiency increases. The slope efficiency increases from 1.15 W/A to 1.20 W/A, and the characteristic temperature for slope efficiency between

$35.0~^{\circ }$

C and

$55.0~^{\circ }$

C increases by 48 K. This letter describes a method for boosting both the slope efficiency and the characteristic temperature for slope efficiency.

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通过使用高铝成分阻挡层提高 885 nm 激光二极管的性能

设计并制造了具有高铝成分 AlGaAs 势垒层 (HABL) 的 885 nm 激光二极管，以减少载流子泄漏。随着势垒高度的增加，内部量子效率也随之提高。斜率效率从 1.15 W/A 增加到 1.20 W/A，斜率效率的特征温度在 $35.0~^{\circ }$ C 和 $55.0~^{\circ }$ C 之间增加了 48 K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.