Exploring the thermoelectric performance of NiFeMnAl and ZnFeVAl as novel quaternary Heusler compounds

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-11-04 DOI:10.1016/j.mseb.2024.117789

Abhigyan Ojha, Rama Krushna Sabat, Sivaiah Bathula

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Abstract

Quaternary Heusler (QH) compounds, characterized by the chemical formula XX’YZ, are highly regarded in the energy materials sector due to their versatile electronic structures. The current study focuses on synthesizing novel QH compounds, NiFeMnAl and ZnFeVAl, through arc-melting followed by hot-pressing at 1073 K. Maximum Seebeck coefficients were exhibited ∼ −20.48 μV/K and ∼ −17.25 μV/K at 773 K for ZnFeVAl and NiFeMnAl, respectively. The evaluated power factor was ∼ 0.058 mWm⁻¹K⁻² for NiFeMnAl and ∼ 0.020 mWm⁻¹K⁻² for ZnFeVAl at 773 K. Furthermore, the lattice thermal conductivity (κ_l) was exhibited ∼ 8.73 Wm⁻¹K⁻¹ for NiFeMnAl and ∼ 6.92 Wm⁻¹K⁻¹ for ZnFeVAl at 773 K, with ZnFeVAl exhibiting a ∼ 20.73 % lower κ_l attributed to chemical bonding distortion arising from differences in constituent element electronegativity. Hence, these novel compounds offer a promising avenue for further research in TE materials, aiming to realize higher-performance materials for practical TE device applications.

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探索新型四元海斯勒化合物 NiFeMnAl 和 ZnFeVAl 的热电性能

以化学式 XX'YZ 为特征的四元海斯勒（QH）化合物因其多变的电子结构而在能源材料领域备受瞩目。目前的研究重点是通过电弧熔炼，然后在 1073 K 下热压合成新型 QH 化合物 NiFeMnAl 和 ZnFeVAl。在 773 K 下，ZnFeVAl 和 NiFeMnAl 的最大塞贝克系数分别为 ∼ -20.48 μV/K 和 ∼ -17.25 μV/K。此外，在 773 K 时，NiFeMnAl 的晶格热导率（κl）为 ∼ 8.73 Wm-1K-1，ZnFeVAl 为 ∼ 6.92 Wm-1K-1。92 Wm-1K-1，其中 ZnFeVAl 的 κl 值低 20.73%，这是由于组成元素的电负性不同导致化学键变形。因此，这些新型化合物为进一步研究 TE 材料提供了一条大有可为的途径，目的是为实际 TE 器件应用实现更高性能的材料。

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.