Myeongchan Ko, Ji Su Park, Soyun Joo, Seungbum Hong, Jong Min Yuk and Kyung Min Kim
{"title":"Direct growth of ferroelectric orthorhombic ZrO2 on Ru by atomic layer deposition at 300 °C†","authors":"Myeongchan Ko, Ji Su Park, Soyun Joo, Seungbum Hong, Jong Min Yuk and Kyung Min Kim","doi":"10.1039/D4MH01119H","DOIUrl":null,"url":null,"abstract":"<p >Fluorite-structured binary oxide ferroelectrics exhibit robust ferroelectricity at a thickness below 10 nm, making them highly scalable and applicable for high-end semiconductor devices. Despite this promising prospect, achieving highly reliable ferroelectrics still demands a significant thermal budget to form a ferroelectric phase, being a hurdle for their use in high-end complementary metal oxide semiconductor (CMOS) processing. Here, we report a robust ferroelectric behavior of an 8 nm-thick ZrO<small><sub>2</sub></small> film deposited <em>via</em> plasma-enhanced atomic layer deposition at 300 °C on a (002)-oriented Ru without any post-annealing process, demonstrating high compatibility with CMOS processing. We propose that a plausible mechanism for this is the local domain matching epitaxy based on the high-resolution transmission electron microscopy and piezoelectric force microscopy results, where the templating effect between [101]-oriented grains of orthorhombic ZrO<small><sub>2</sub></small> and [010]-oriented grains of Ru enables the direct growth of ferroelectric ZrO<small><sub>2</sub></small>. The 2<em>P</em><small><sub>r</sub></small> value is 20 μC cm<small><sup>−2</sup></small>, and it can be further improved by post-annealing at 400 °C to 23 μC cm<small><sup>−2</sup></small> without showing the wake-up behavior. Ferroelectric switching shows stable endurance for up to 10<small><sup>9</sup></small> cycles, showcasing its high potential in CMOS-compatible applications and nanoelectronics with a low thermal budget.</p>","PeriodicalId":87,"journal":{"name":"Materials Horizons","volume":" 2","pages":" 565-574"},"PeriodicalIF":12.2000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Horizons","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/mh/d4mh01119h","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Fluorite-structured binary oxide ferroelectrics exhibit robust ferroelectricity at a thickness below 10 nm, making them highly scalable and applicable for high-end semiconductor devices. Despite this promising prospect, achieving highly reliable ferroelectrics still demands a significant thermal budget to form a ferroelectric phase, being a hurdle for their use in high-end complementary metal oxide semiconductor (CMOS) processing. Here, we report a robust ferroelectric behavior of an 8 nm-thick ZrO2 film deposited via plasma-enhanced atomic layer deposition at 300 °C on a (002)-oriented Ru without any post-annealing process, demonstrating high compatibility with CMOS processing. We propose that a plausible mechanism for this is the local domain matching epitaxy based on the high-resolution transmission electron microscopy and piezoelectric force microscopy results, where the templating effect between [101]-oriented grains of orthorhombic ZrO2 and [010]-oriented grains of Ru enables the direct growth of ferroelectric ZrO2. The 2Pr value is 20 μC cm−2, and it can be further improved by post-annealing at 400 °C to 23 μC cm−2 without showing the wake-up behavior. Ferroelectric switching shows stable endurance for up to 109 cycles, showcasing its high potential in CMOS-compatible applications and nanoelectronics with a low thermal budget.