Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-11-04 DOI:10.1038/s41928-024-01279-w

Yanjie Shao, Marco Pala, Hao Tang, Baoming Wang, Ju Li, David Esseni, Jesús A. del Alamo

引用次数: 0

Abstract

The development of data-centric computing requires new energy-efficient electronics that can overcome the fundamental limitations of conventional silicon transistors. A range of novel transistor concepts have been explored, but an approach that can simultaneously offer high drive current and steep slope switching while delivering the necessary scaling in footprint is still lacking. Here, we report scaled vertical-nanowire heterojunction tunnelling transistors that are based on the broken-band GaSb/InAs system. The devices offer a drive current of 300 µA µm⁻¹ and a sub-60 mV dec⁻¹ switching slope at an operating voltage of 0.3 V. The approach relies on extreme quantum confinement at the tunnelling junction and is based on an interface-pinned energy band alignment at the tunnelling heterojunction under strong quantization.

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具有极端量子约束的按比例垂直纳米线异质结隧穿晶体管

发展以数据为中心的计算需要新型高能效电子器件，以克服传统硅晶体管的基本限制。人们已经探索了一系列新型晶体管概念，但仍然缺乏一种既能提供高驱动电流和陡坡开关，又能实现必要的基底面扩展的方法。在此，我们报告了基于断带砷化镓/砷化铟（GaSb/InAs）系统的缩放垂直纳米线异质结隧穿晶体管。该器件的驱动电流为 300 µA µm-1，工作电压为 0.3 V 时的开关斜率低于 60 mV dec-1。该方法依赖于隧穿结的极端量子约束，并基于强量子化条件下隧穿异质结的界面钉能带排列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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