Tunable electromagnetic and broadband absorption of FeNi decorated SiC nanowires absorbents

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Liuliu Yan, Yuansheng Wang, Xuan wang, Wanchong Li, Rurong Zou, Wei Huang, Zhuo Yin, Dongmei Jia, Yongqing Li
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Abstract

With the widespread use of wireless communication technologies, high-performance, easy-to-volume-produce electromagnetic (EM) absorption materials are in urgent need. In this work, FeNi nanosheets decorated silicon carbide nanowires (SiCnws) hybrids are prepared by a simple in-situ reduction method. Microstructural studies show that FeNi nanosheets are uniformly distributed on the surface of SiCnws, with some other incompact spherical FeNi nanoparticles dissociating out of SiCnws. Benefiting from multidimensional heterostructures and the synergistic effect of multiple loss mechanisms, the SiCnws@FeNi hybrids exhibit enhanced EM absorption performance compared to pure SiCnws. It is worth noting that the excessive introduction of magnetic FeNi leads to a degeneration of EM absorption in the SiC nws@FeNi-0.6 sample due to the decline of attenuation capability and impedance mismatch. As a result, the SiCnws@FeNi-0.4 sample exhibits the best EM absorption with an effective absorption bandwidth (EAB) of 5.4 GHz at only 1.7 mm, and the minimum reflection loss reaches up to − 50.76 dB at 2.8 mm. Considering their simple preparation method and excellent EM absorption performance, the as-prepared SiCnws@FeNi composite material is expected to be a candidate material for EM absorption with practical application prospect.

氮化铁装饰碳化硅纳米线吸波材料的可调谐电磁吸收和宽带吸收
随着无线通信技术的广泛应用,急需高性能、易量产的电磁(EM)吸收材料。本研究采用简单的原位还原法制备了装饰碳化硅纳米线(SiCnws)的铁镍纳米片。微观结构研究表明,镍铁纳米片均匀地分布在碳化硅纳米线表面,另有一些不紧凑的球形镍铁纳米颗粒从碳化硅纳米线中解离出来。得益于多维异质结构和多种损耗机制的协同效应,与纯 SiCnws 相比,SiCnws@FeNi 混合物表现出更强的电磁吸收性能。值得注意的是,由于衰减能力下降和阻抗失配,过量引入磁性 FeNi 会导致 SiC nws@FeNi-0.6 样品的电磁吸收能力下降。因此,SiCnws@FeNi-0.4 样品的电磁吸收效果最好,在 1.7 毫米处的有效吸收带宽(EAB)为 5.4 GHz,而在 2.8 毫米处的最小反射损耗高达 - 50.76 dB。考虑到其简单的制备方法和优异的电磁吸收性能,所制备的 SiCnws@FeNi 复合材料有望成为一种具有实际应用前景的电磁吸收候选材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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