Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-10-30 DOI:10.1016/j.mejo.2024.106460

Chao Dong, Sai Gao, Yulin Liu, Gengji Wang, Jinliang Yin, Mingxing Du

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引用次数: 0

Abstract

This paper investigates gate oxide degradation and its influence on Differential Mode(DM) EMI signals. The study reveals that changes in the parasitic capacitance within the chip, resulting from gate oxide degradation, can modify the amplitude-frequency characteristics of DM EMI signals, leading to unexpected transmission outcomes. This paper subjects SiC MOSFET modules to periodic high-temperature gate bias stress, extracts the spectrum characteristics of DM EMI, and assesses the impact of junction temperature. The analysis explores the impact of gate oxide degradation on low and high frequency DM EMI signals. Experimental results reveal distinct sensitivities of amplitude-frequency characteristics in the DM EMI signals to temperature variations and responses to gate oxide degradation at various frequency bands. The extrapolation of the correlation between the frequency-domain characteristics of the DM EMI signals and the degree of gate oxide degradation introduces a novel approach to evaluate the lifespan of power electronic devices.

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栅极氧化物降解对 SiC MOSFET 中 DM EMI 信号的影响机制研究

本文研究了栅极氧化物退化及其对差分模式（DM）EMI 信号的影响。研究发现，栅极氧化物退化导致的芯片内寄生电容变化会改变 DM EMI 信号的幅频特性，从而导致意想不到的传输结果。本文将 SiC MOSFET 模块置于周期性高温栅极偏压应力下，提取 DM EMI 的频谱特性，并评估结温的影响。分析探讨了栅极氧化物退化对低频和高频 DM EMI 信号的影响。实验结果揭示了 DM EMI 信号的幅频特性对温度变化的不同敏感性，以及在不同频段对栅极氧化物退化的响应。DM EMI 信号的频域特征与栅极氧化物退化程度之间的相关性推断，为评估电力电子器件的寿命提供了一种新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.