Optical control of multiple resistance levels in graphene for memristic applications

IF 9.1 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

npj 2D Materials and Applications Pub Date : 2024-10-29 DOI:10.1038/s41699-024-00503-7

Harsimran Kaur Mann, Mainak Mondal, Vivek Sah, Kenji Watanabe, Takashi Taniguchi, Akshay Singh, Aveek Bid

{"title":"Optical control of multiple resistance levels in graphene for memristic applications","authors":"Harsimran Kaur Mann, Mainak Mondal, Vivek Sah, Kenji Watanabe, Takashi Taniguchi, Akshay Singh, Aveek Bid","doi":"10.1038/s41699-024-00503-7","DOIUrl":null,"url":null,"abstract":"Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a qualitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":null,"pages":null},"PeriodicalIF":9.1000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00503-7.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj 2D Materials and Applications","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41699-024-00503-7","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a qualitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.

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光学控制石墨烯中的多级电阻，实现记忆应用

神经形态计算强调需要具有非易失性多电导水平的忆阻器。本文展示了六方氮化硼（hBN）/石墨烯异质结构作为具有多种电阻状态的忆阻器的潜力，这种忆阻器可以用可见光进行光学调谐。石墨烯中电阻水平的数量可通过调节掺杂水平来控制，通过改变电场强度或调整光照持续时间来实现。我们的测量结果表明，石墨烯的这种光掺杂是电荷载流子从 hBN 的氮空位被光激发到其导带的结果，然后这些载流子在栅极诱导电场的作用下转移到石墨烯。我们建立了一个定性模型来描述我们的观察结果。此外，利用我们的器件结构，我们提出了一种用于矢量矩阵乘法的忆阻横杆阵列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

npj 2D Materials and Applications Engineering-Mechanics of Materials

CiteScore

14.50

自引率

2.10%

发文量

审稿时长

15 weeks

期刊介绍： npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.