Synthesis, crystal growth, structural characterization and third-order NLO properties of caesium trihydrodiphthalate

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
C. Balakrishnan, S. P. Meenakshisundaram, P. Suppuraj, S. Bhuvaneshwari, G. Vinitha
{"title":"Synthesis, crystal growth, structural characterization and third-order NLO properties of caesium trihydrodiphthalate","authors":"C. Balakrishnan,&nbsp;S. P. Meenakshisundaram,&nbsp;P. Suppuraj,&nbsp;S. Bhuvaneshwari,&nbsp;G. Vinitha","doi":"10.1007/s10854-024-13771-2","DOIUrl":null,"url":null,"abstract":"<div><p>Single crystals of (benzene-1,2-dicarboxylic acid-κO)(2-carboxybenzoato-κO) caesium(I), also known as caesium trihydrodiphthalate (CsADP), were successfully synthesized through a controlled hydrothermal reaction between caesium sulfate and phthalic acid in a 1:2 molar ratio. The resulting crystals, grown over 26–28 days, were analyzed using various techniques. FT-IR spectroscopy revealed characteristic vibrational bands, while powder XRD and single-crystal XRD confirmed phase purity and structural properties. CsADP crystallizes in the orthorhombic system with a centrosymmetric space group (P<i>bcn</i>). The caesium ion is coordinated by ten oxygen atoms, with Cs···O bond lengths ranging from 3.085 to 3.610 Å, forming a distorted bicapped square antiprism geometry. Thermal analysis indicated stability up to 240 °C, while UV–Vis spectroscopy demonstrated transparency, with a bandgap of 4.17 eV. Nonlinear optical (NLO) properties were investigated using Z-scan techniques, revealing reverse saturation absorption and a strong third-order susceptibility, highlighting CsADP as a promising candidate for NLO applications. Hirshfeld surface analysis identified dominant O···H/H···O interactions, contributing to its NLO behaviour. Additionally, molecular electrostatic potential and Mulliken population analysis provided insights into the charge distribution within the structure.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13771-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Single crystals of (benzene-1,2-dicarboxylic acid-κO)(2-carboxybenzoato-κO) caesium(I), also known as caesium trihydrodiphthalate (CsADP), were successfully synthesized through a controlled hydrothermal reaction between caesium sulfate and phthalic acid in a 1:2 molar ratio. The resulting crystals, grown over 26–28 days, were analyzed using various techniques. FT-IR spectroscopy revealed characteristic vibrational bands, while powder XRD and single-crystal XRD confirmed phase purity and structural properties. CsADP crystallizes in the orthorhombic system with a centrosymmetric space group (Pbcn). The caesium ion is coordinated by ten oxygen atoms, with Cs···O bond lengths ranging from 3.085 to 3.610 Å, forming a distorted bicapped square antiprism geometry. Thermal analysis indicated stability up to 240 °C, while UV–Vis spectroscopy demonstrated transparency, with a bandgap of 4.17 eV. Nonlinear optical (NLO) properties were investigated using Z-scan techniques, revealing reverse saturation absorption and a strong third-order susceptibility, highlighting CsADP as a promising candidate for NLO applications. Hirshfeld surface analysis identified dominant O···H/H···O interactions, contributing to its NLO behaviour. Additionally, molecular electrostatic potential and Mulliken population analysis provided insights into the charge distribution within the structure.

三氢二邻苯二甲酸铯的合成、晶体生长、结构表征和三阶 NLO 性能
通过硫酸铯和邻苯二甲酸以 1:2 的摩尔比进行受控水热反应,成功合成了 (苯-1,2-二甲酸-κO)(2-羧基苯甲酸-κO) 铯 (I)(又称三氢二邻苯二甲酸铯 (CsADP))单晶体。利用各种技术对经过 26-28 天生长的晶体进行了分析。傅立叶变换红外光谱显示了特征振动带,粉末 X 射线衍射和单晶 X 射线衍射证实了相纯度和结构特性。CsADP 在正方晶系中结晶,具有中心对称空间群(Pbcn)。铯离子由 10 个氧原子配位,Cs--O 键长度为 3.085 至 3.610 Å,形成扭曲的双帽方形反棱柱几何结构。热分析表明其稳定性可达 240 °C,而紫外可见光谱则表明其具有透明度,带隙为 4.17 eV。利用 Z 扫描技术对其非线性光学(NLO)特性进行了研究,发现了反向饱和吸收和较强的三阶电感,凸显了 CsADP 作为 NLO 应用候选材料的前景。Hirshfeld 表面分析确定了主要的 O-H/H-O 相互作用,这有助于其 NLO 行为。此外,分子静电位和 Mulliken 种群分析有助于深入了解结构内的电荷分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信