Band gap tuning of Ce doping in Zn:Zr system for enhanced visible light-driven photocatalysis

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI:10.1007/s10854-024-13734-7

J. Roselin Jeyaseeli, A. Philominal, P. Jaikumar, Varuna Kumaravel, Senthil Kumar Sadasivam

{"title":"Band gap tuning of Ce doping in Zn:Zr system for enhanced visible light-driven photocatalysis","authors":"J. Roselin Jeyaseeli, A. Philominal, P. Jaikumar, Varuna Kumaravel, Senthil Kumar Sadasivam","doi":"10.1007/s10854-024-13734-7","DOIUrl":null,"url":null,"abstract":"<div><p>The environmental threat posed by industrial dyes necessitates the development of efficient photocatalytic systems for their degradation. This study focuses on the Ce-doped Zn:Zr system as an innovative solution for visible-light-driven photocatalytic degradation of textile dyes offering significant environmental and industrial benefits. The Ce-doping effect on the photocatalytic efficiency of the Zn:Zr system was investigated. Both undoped and Ce-doped Zn:Zr systems exhibited hexagonal nanostructures with high atomic percentages of Zn, while Ce was incorporated at lower percentages. X-ray diffraction confirmed the unaltered hexagonal ZnO, tetragonal, and monoclinic ZrO<sub>2</sub> crystal structures in the systems. The peak broadening in the Ce-doped samples indicates successful doping. Even the tiniest alteration in band gap resulted in a dramatic increase in methylene blue dye degradation up to 98.4%, significant at <i>p</i> < 0.05. This enhanced efficiency is attributed to the heterogeneous pairing mechanism which improves charge carrier separation with superoxide anions and singlet oxygen identified as the primary reactive species. The findings demonstrate the applicability of band gap engineering in organic pollutant degradation and highlight the potential of Ce-doped Zn:Zr systems as a cost-effective and energy-efficient solution for industrial wastewater management.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13734-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

The environmental threat posed by industrial dyes necessitates the development of efficient photocatalytic systems for their degradation. This study focuses on the Ce-doped Zn:Zr system as an innovative solution for visible-light-driven photocatalytic degradation of textile dyes offering significant environmental and industrial benefits. The Ce-doping effect on the photocatalytic efficiency of the Zn:Zr system was investigated. Both undoped and Ce-doped Zn:Zr systems exhibited hexagonal nanostructures with high atomic percentages of Zn, while Ce was incorporated at lower percentages. X-ray diffraction confirmed the unaltered hexagonal ZnO, tetragonal, and monoclinic ZrO₂ crystal structures in the systems. The peak broadening in the Ce-doped samples indicates successful doping. Even the tiniest alteration in band gap resulted in a dramatic increase in methylene blue dye degradation up to 98.4%, significant at p < 0.05. This enhanced efficiency is attributed to the heterogeneous pairing mechanism which improves charge carrier separation with superoxide anions and singlet oxygen identified as the primary reactive species. The findings demonstrate the applicability of band gap engineering in organic pollutant degradation and highlight the potential of Ce-doped Zn:Zr systems as a cost-effective and energy-efficient solution for industrial wastewater management.

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调整 Zn:Zr 系统中掺杂 Ce 的带隙以增强可见光驱动的光催化能力

工业染料对环境造成了威胁，因此有必要开发高效的光催化系统来降解这些染料。本研究的重点是掺杂铈的 Zn:Zr 系统，它是可见光驱动光催化降解纺织染料的创新解决方案，具有显著的环境和工业效益。研究了掺杂 Ce 对 Zn:Zr 系统光催化效率的影响。未掺杂和掺杂 Ce 的 Zn:Zr 系统都呈现出六边形纳米结构，其中 Zn 的原子百分比较高，而掺杂 Ce 的百分比较低。X 射线衍射证实了这些体系中未改变的六方氧化锌、四方和单斜 ZrO2 晶体结构。掺杂铈的样品的峰值变宽表明掺杂成功。即使是最微小的带隙变化也能使亚甲基蓝染料的降解率大幅提高至 98.4%，在 p < 0.05 时显著。效率的提高归功于异质配对机制，它改善了电荷载流子的分离，超氧阴离子和单线态氧被确定为主要的活性物种。这些研究结果证明了带隙工程在有机污染物降解中的适用性，并凸显了掺杂 Ce 的 Zn:Zr 系统作为一种具有成本效益和能效的工业废水管理解决方案的潜力。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.