Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability

IF 3.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Byoungjun Won, Geun-Ha Oh, Il-Kwon Oh
{"title":"Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability","authors":"Byoungjun Won,&nbsp;Geun-Ha Oh,&nbsp;Il-Kwon Oh","doi":"10.1007/s10853-024-10309-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the effects of Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> passivation layers on Ge substrates are investigated to enhance the thermal stability of Ge-based devices. Using X-ray photoelectron spectroscopy, we analyze the growth characteristics and chemical composition of Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, and ZrO<sub>2</sub> on Ge. The changes in the crystallinity of ZrO<sub>2</sub> on different substrates of Ge, Al<sub>2</sub>O<sub>3</sub>/Ge, and Y<sub>2</sub>O<sub>3</sub>/Ge configurations are observed via X-ray diffraction. Material properties, including capacitance, flat band voltage shift (Δ<i>V</i><sub>FB</sub>), oxide charge trap (<i>N</i><sub>ot</sub>), interface defect density (<i>D</i><sub>it</sub>), and leakage current, are analyzed using the metal–oxide–semiconductor capacitor, with a particular focus on their electrical characteristics. Additionally, we investigate whether the passivation mechanisms of each material are more suitable for enhancing thermal stability. Overall, this study provides insight into the role of passivation layers in improving the interface and thermal stability of Ge-based devices, offering valuable contributions to the advancement of semiconductor technology.</p><h3>Graphical abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"59 41","pages":"19584 - 19595"},"PeriodicalIF":3.5000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-024-10309-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In this study, the effects of Al2O3 and Y2O3 passivation layers on Ge substrates are investigated to enhance the thermal stability of Ge-based devices. Using X-ray photoelectron spectroscopy, we analyze the growth characteristics and chemical composition of Al2O3, Y2O3, and ZrO2 on Ge. The changes in the crystallinity of ZrO2 on different substrates of Ge, Al2O3/Ge, and Y2O3/Ge configurations are observed via X-ray diffraction. Material properties, including capacitance, flat band voltage shift (ΔVFB), oxide charge trap (Not), interface defect density (Dit), and leakage current, are analyzed using the metal–oxide–semiconductor capacitor, with a particular focus on their electrical characteristics. Additionally, we investigate whether the passivation mechanisms of each material are more suitable for enhancing thermal stability. Overall, this study provides insight into the role of passivation layers in improving the interface and thermal stability of Ge-based devices, offering valuable contributions to the advancement of semiconductor technology.

Graphical abstract

在 Ge 基底上与 ZrO2 形成双层钝化层对提高热稳定性的影响
本研究探讨了 Ge 基底上的 Al2O3 和 Y2O3 钝化层对提高 Ge 基器件热稳定性的影响。我们利用 X 射线光电子能谱分析了 Al2O3、Y2O3 和 ZrO2 在 Ge 上的生长特性和化学成分。通过 X 射线衍射,我们观察了 ZrO2 在 Ge、Al2O3/Ge 和 Y2O3/Ge 配置的不同衬底上结晶度的变化。我们利用金属-氧化物-半导体电容器分析了材料特性,包括电容、平带电压偏移 (ΔVFB)、氧化物电荷阱 (Not)、界面缺陷密度 (Dit) 和漏电流,尤其关注其电气特性。此外,我们还研究了每种材料的钝化机制是否更适合增强热稳定性。总之,本研究深入探讨了钝化层在改善 Ge 基器件的界面和热稳定性方面的作用,为半导体技术的进步做出了宝贵贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science
Journal of Materials Science 工程技术-材料科学:综合
CiteScore
7.90
自引率
4.40%
发文量
1297
审稿时长
2.4 months
期刊介绍: The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.
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