Investigation of Physico-Chemical Properties of CH3NH3PbI3 and CH3NH3PbI3–xClx Hybrid Perovskites Thin Films for Photovoltaic and Optoelectronic Applications: A Comparative Study

IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Sana Hariech, Ilhem Menzri
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Abstract

CH3NH3PbI3 and CH3NH3PbI3–xClx, hybrid perovskites thin films were grown on glass substrates employing spin-coating technique at different rotational speeds varying from 1000 to 2000 rpm. All the films exhibited a polycrystalline tetragonal structure with a preferred (110) orientation. For each rotational speed, the CH3NH3PbI3 and CH3NH3PbI3–xClx films had approximately the same order of the absorbance in the visible region of solar spectrum. The current–voltage measurements of the CH3NH3PbI3 and CH3NH3PbI3–xClx films showed a ferroelectric hysteresis behavior in the dark which it becomes Ohmic under the illumination indicating the microstructural improvement. The all samples were strongly resistive in the dark, and their electrical conductivity improving thousands of times under the illumination; it had varied in the ranges 25.5 × 10–3‒206.61 (Ω cm)–1 and 82.81 × 10–3‒689.47 (Ω cm)–1 for CH3NH3PbI3 and CH3NH3PbI3–xClx, respectively. Our results demonstrated that the 1000 and 2000 rpm were optimal parameters for CH3NH3PbI3 and CH3NH3PbI3–xClx films preparation, respectively. Moreover, the addition of the chlorine in CH3NH3PbI3 films improves their physico-chemical properties. Indeed, compared to the CH3NH3PbI3 prepared at 1000 rpm, the CH3NH3PbI3–xClx film synthesized at 2000 rpm had the thinner thickness 571.58 nm, largest crystallite size 204.81 nm, lesser dislocation density 2.38 × 10–5 lines nm–2, superior quality of surface morphology, higher band gap 1.53 eV, lower Urbach energy 276.23 meV, higher refractive index 2.96, higher electrical conductivity in the dark 82.81 × 10–3 (Ω cm)–1 and under the illumination 689.47 (Ω cm)–1. CH3NH3PbI3–xClx thin film synthesized at 2000 rpm has better quality that might be more suitable as a light absorbers films for photovoltaic cells and optoelectronic devices.

Abstract Image

用于光伏和光电应用的 CH3NH3PbI3 和 CH3NH3PbI3-xClx 混合过氧化物薄膜的物理化学性质研究:比较研究
利用旋涂技术,在玻璃基底上以 1000 至 2000 转/分的不同转速生长了 CH3NH3PbI3 和 CH3NH3PbI3-xClx 混合包晶薄膜。所有薄膜都呈现多晶四方结构,并具有优先(110)取向。在每种转速下,CH3NH3PbI3 和 CH3NH3PbI3-xClx 薄膜在太阳光谱可见光区的吸光度顺序大致相同。CH3NH3PbI3 和 CH3NH3PbI3-xClx 薄膜的电流-电压测量结果表明,它们在暗处具有铁电磁滞行为,而在光照下则变为欧姆状态,这表明微结构得到了改善。所有样品在暗处都具有很强的电阻性,而在光照下它们的导电率则提高了数千倍;CH3NH3PbI3 和 CH3NH3PbI3-xClx 的导电率范围分别为 25.5 × 10-3-206.61 (Ω cm)-1 和 82.81 × 10-3-689.47 (Ω cm)-1 。结果表明,1000 转/分钟和 2000 转/分钟分别是制备 CH3NH3PbI3 和 CH3NH3PbI3-xClx 薄膜的最佳参数。此外,在 CH3NH3PbI3 薄膜中添加氯还能改善其物理化学特性。事实上,与在 1000 转/分钟条件下制备的 CH3NH3PbI3 相比,在 2000 转/分钟条件下合成的 CH3NH3PbI3-xClx 薄膜厚度更薄,为 571.58 nm,晶体尺寸最大,为 204.81 nm,位错密度较低,为 2.38 × 10-5 线 nm-2,表面形貌质量上乘,带隙较高,为 1.53 eV,厄巴赫能较低,为 276.23 meV,折射率较高,为 2.96,黑暗中的导电率为 82.81 × 10-3 (Ω cm)-1 ,光照下的导电率为 689.47 (Ω cm)-1。在 2000 rpm 转速下合成的 CH3NH3PbI3-xClx 薄膜质量更好,可能更适合用作光伏电池和光电设备的光吸收薄膜。
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来源期刊
Physics of the Solid State
Physics of the Solid State 物理-物理:凝聚态物理
CiteScore
1.70
自引率
0.00%
发文量
60
审稿时长
2-4 weeks
期刊介绍: Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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