High-performance n-type polymer field-effect transistors with exceptional stability†

Abstract

Development of organic field-effect transistors (OFETs) that simultaneously exhibit high-performance and high-stability is critical for complementary integrated circuits and other applications based on organic semiconductors. While progress has been made in enhancing p-channel devices, engineering competitive n-type organic transistors remains a formidable obstacle. Herein, we demonstrate the achievement of high-mobility n-type OFETs with unprecedented operational stability through innovative device and material engineering. Thin film transistors fabricated on donor–acceptor polymers based on indacenodithiazole (IDTz) and diketopyrrolopyrrole (DPP) units exhibit electron mobilities up to 1.3 cm² V⁻¹ s⁻¹, along with a negligible change in mobility, and threshold voltage shift as low as 0.5 V under continuous bias stress of 60 V for both the gate-source and drain-source voltages persisting for more than 1000 min. These remarkable properties position our OFETs as formidable counterparts to p-type transistors, addressing a longstanding challenge in the field.