Electrical Doping Regulation of Carrier Recombination Enhances the Perovskite Solar Cell Efficiency beyond 28.

Abstract

With the power conversion efficiency (PCE) of perovskite solar cells (PSCs) exceeding 26.7%, achieving further enhancements in device performance has become a key research focus. Here, we investigate the impact of electrical doping in the perovskite layer using the drift-diffusion equation-based device physics model, coupled with a self-developed equivalent circuit model. Our results demonstrate that electrical doping can increase the PCE from 24.78% to >28%. In-depth theoretical analysis reveals that these improvements in performance are driven by the modulation of carrier recombination processes through doping, leading to significant increases in the open-circuit voltage and fill factor. Additionally, we explore the influence of physical parameters on device performance. Our study identifies an optimal doping concentration range from 1.0 × 10¹⁷ to 1.0 × 10¹⁹ cm^-3 and a transport layer mobility of >0.01 cm² V^-1 s^-1. This work provides a theoretical foundation for the development of ultra-high-performance PSCs through targeted electrical doping strategies.